Results 21 to 30 of about 1,939,285 (262)
Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
Micromachines, 2021 This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static ...
Chia-Yuan Chen +4 more
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Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design
IEEE Journal of the Electron Devices Society, 2020 We discuss details of the Charge Sheet SuperJunction (CSSJ) in 4H-Silicon Carbide (SiC). This device was earlier proposed in Si material. A CSSJ is obtained by replacing the p-pillar of a SJ by a bilayer insulator, e.g., Al2O3/SiO2; the inter-layer ...
K. Akshay, Shreepad Karmalkar
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A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile
IEEE Journal of the Electron Devices Society, 2021 In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices ...
Hao Huang +6 more
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Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure
Micromachines, 2022 In this article, an innovative GaN-based trench current-aperture vertical electron transistor (CAVET) with a stepped doping microstructure is proposed and studied using Silvaco-ATLAS.
Yuan Li +3 more
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150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
Micromachines, 2020 A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied.
Feng-Tso Chien +5 more
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A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors
IEEE Journal of the Electron Devices Society, 2021 In this paper, we have proposed a simple and zero-cost technique to improve ON-state and reliability performance of LDMOS transistors. We introduced doping gradient in the channel by optimizing position of the P-Well mask during test structure design ...
Kumari Neeraj Kaushal +1 more
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Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
Results in Physics, 2020 To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo +6 more
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Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes
IEEE Journal of the Electron Devices Society, 2021 An ultralow specific on-resistance ( ${R} _{\mathrm{ on,sp}}$ ) accumulation-mode LDMOS (ALDMOS) is proposed and investigated by simulations and experiments.
Jie Wei +6 more
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IEEE Journal of the Electron Devices Society, 2020 This note clarifies an important approximation used to simulate the breakdown field in the SiO2 liner of a SiC Charge-Sheet Superjunction - a new power device structure - reported by Akshay and Karmalkar (2020).
K. Akshay, Shreepad Karmalkar
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A Uni-gate vertical power MOSFET with improved figure of Merits: Design and analysis
Alexandria Engineering Journal, 2023 In this paper, we propose and analyze a single buried gate power MOSFET structure. The structure uses single gate buried under the source and channel region with its dimensions optimized to get the best Ron-BV tradeoff. The device exhibits a good scaling
Hafsa Nigar +3 more
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