Results 81 to 90 of about 3,266 (171)

Harnessing synergy of spin and orbital currents in heavy metal/ferromagnet multilayers

Communications Physics
Spin-orbitronics, exploiting electron spin and/or orbital angular momentum, offers a powerful route to energy-efficient spintronic applications. Recent research on orbital currents in light metals broadens the scope of spin-orbit torque (SOT).
Yumin Yang, Zhicheng Xie, Zhiyuan Zhao, Na Lei, Jianhua Zhao, Dahai Wei   +5 more
doaj   +1 more source

Understanding current-driven dynamics of magnetic Néel walls in heavy metal/ferromagnetic metal/oxide trilayers

New Journal of Physics, 2019
We consider analytically current-driven dynamics of magnetic Néel walls in heavy metal/ferromagnetic metal/oxide trilayers where strong spin–orbit coupling and interfacial Dzyaloshinskii–Moriya interaction (i-DMI) coexist.
Mei Li, Jianbo Wang, Jie Lu
doaj   +1 more source

Orbital Current Boosting Magnetization Switching Efficiency in Metallic Superlattices

Advanced Electronic Materials
Orbitronics is an emerging domain within spintronics, and it is characterized by a rapid development of methods for utilizing orbital current. Metals with strong spin‐orbit coupling have been effectively used to convert orbital current into orbital ...
Junwen Wei, Xinkai Xu, Zijin Lin, Yuanjing Qu, Xiaoli Tang, Zhiyong Zhong, Huaiwu Zhang, Lichuan Jin   +7 more
doaj   +1 more source

Spin-orbit torque MRAM performance with different materials

Materials Research Express
spin–orbit torque (SOT) technology has emerged as a promising approach for developing advanced magnetic devices with superior performance metrics. The SOT enables efficient control of magnetic states through the generation of spin currents via spin–orbit
Piyush Tankwal, M Shashidhara, Abhishek Acharya, Sandeep Singh Chauhan, Satyendra Kumar Mourya, Vikas Nehra   +5 more
doaj   +1 more source

Enhanced spin-orbit torque by interfacial Rashba-Edelstein effect in an all-oxide epitaxial heterostructure

Communications Physics
Manipulation of local magnetization with spin-orbit torque (SOT) is a promising technology due to its minimal electromagnetic interference and fast response. Improving SOT efficiency is highly desired for energy conservation and device reliability.
Weikang Liu, Xinyi Wu, Bin Cui, Liang Liu, Xiangxiang Zhao, Xu Zhang, Zhiyu Zhang, Hehe Ding, Bin Cheng, Guangjun Zhou, Jifan Hu   +10 more
doaj   +1 more source

Current Induced Field‐Free Switching in a Magnetic Insulator with Enhanced Spin‐Orbit Torque

Advanced Electronic Materials
The energy‐efficient spin‐orbit torque (SOT) based devices are essential for future memory and logic technologies. To realize a deterministic switching, an external in‐plane magnetic field is usually needed to break the symmetry, which becomes an ...
He Bai, Jialiang Li, Jintao Ke, Qixun Guo, Zhaozhao Zhu, Yaqin Guo, Xiao Deng, Dan Liu, Jianwang Cai, Tao Zhu   +9 more
doaj   +1 more source

Large out-of-plane spin–orbit torque in topological Weyl semimetal TaIrTe4

Nature Communications
The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with ...
Lakhan Bainsla, Bing Zhao, Nilamani Behera, Anamul Md. Hoque, Lars Sjöström, Anna Martinelli, Mahmoud Abdel-Hafiez, Johan Åkerman, Saroj P. Dash   +8 more
doaj   +1 more source

Effect of surface state hybridization on current-induced spin-orbit torque in thin topological insulator films

Scientific Reports, 2017
We investigate the thickness optimization for maximum current-induced spin-orbit torque (SOT) generated by topological surface states (TSS’s) in a bilayer system comprising of a ferromagnetic layer coupled to a thin topological insulator (TI) film.
Cong Son Ho, Yi Wang, Zhou Bin Siu, Seng Ghee Tan, Mansoor B. A. Jalil, Hyunsoo Yang   +5 more
doaj   +1 more source

Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales

Nature Communications
Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of ...
Qu Yang, Donghyeon Han, Shishun Zhao, Jaimin Kang, Fei Wang, Sung-Chul Lee, Jiayu Lei, Kyung-Jin Lee, Byong-Guk Park, Hyunsoo Yang   +9 more
doaj   +1 more source

High write endurance up to 1012 cycles in a spin current-type magnetic memory array

AIP Advances, 2019
We demonstrated high write endurance of up to 1012 cycles with a pulse write current of 10 ns in a spin current-type (SC) single magnetic tunnel junction (MTJ) element and 8×8 memory array.
Yohei Shiokawa, Eiji Komura, Yugo Ishitani, Atsushi Tsumita, Keita Suda, Yuji Kakinuma, Tomoyuki Sasaki   +6 more
doaj   +1 more source