Results 51 to 60 of about 10,430 (199)

Large‐Scale and Highly Reliable Hopfield Neural Networks Using Vertical NAND Flash Memory for the In‐Memory Associative Computing

open access: yesAdvanced Intelligent Systems, EarlyView.
Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang   +4 more
wiley   +1 more source

Low-power adiabatic 9T static random access memory

open access: yesThe Journal of Engineering, 2014
In this paper, the authors propose a novel static random access memory (SRAM) that employs the adiabatic logic principle. To reduce energy dissipation, the proposed adiabatic SRAM is driven by two trapezoidal-wave pulses.
Yasuhiro Takahashi   +3 more
doaj   +1 more source

A Flexible and Energy‐Efficient Compute‐in‐Memory Accelerator for Kolmogorov–Arnold Networks

open access: yesAdvanced Intelligent Systems, EarlyView.
This article presents KA‐CIM, a compute‐in‐memory accelerator for Kolmogorov–Arnold Networks (KANs). It enables flexible and efficient computation of arbitrary nonlinear functions through cross‐layer co‐optimization from algorithm to device. KA‐CIM surpasses CPU, ASIC, VMM‐CIM, and prior KAN accelerators by 1–3 orders of magnitude in energy‐delay ...
Chirag Sudarshan   +6 more
wiley   +1 more source

Impact of body biasing on the retention time of gain-cell memories

open access: yesThe Journal of Engineering, 2013
Gain-cell-based embedded dynamic random-access memory (DRAMs) are a potential high-density alternative to mainstream static random-access memory (SRAM).
Pascal Meinerzhagen   +3 more
doaj   +1 more source

Chipmunk: A Systolically Scalable 0.9 mm${}^2$, 3.08 Gop/s/mW @ 1.2 mW Accelerator for Near-Sensor Recurrent Neural Network Inference [PDF]

open access: yes, 2018
Recurrent neural networks (RNNs) are state-of-the-art in voice awareness/understanding and speech recognition. On-device computation of RNNs on low-power mobile and wearable devices would be key to applications such as zero-latency voice-based human ...
Benini, Luca   +4 more
core   +2 more sources

Field‐free programmable bipolar magnetic heterostructures for neuromorphic computing

open access: yesInfoMat, EarlyView.
Neuromorphic computing mimics the brain's efficiency, yet typical memristors lack biological synapses' dual signal control. We introduce a magnetic memristor enabling bidirectional, multi‐state modulation without external fields, validated in image feature extraction and neural clustering.
Yaping He   +9 more
wiley   +1 more source

Improved hybrid scrubbing scheme for spaceborne static random access memory-based field programmable gate arrays

open access: yesThe Journal of Engineering, 2019
With the shrinking feature sizes of static random access memory-based field programmable gate arrays (FPGAs), the occurrence probability of multiple-cell upsets (MCUs) in FPGAs continues to increase. This reduces the reliability of FPGAs.
Yue Li   +3 more
doaj   +1 more source

Near-Memory Address Translation

open access: yes, 2017
Memory and logic integration on the same chip is becoming increasingly cost effective, creating the opportunity to offload data-intensive functionality to processing units placed inside memory chips. The introduction of memory-side processing units (MPUs)
Falsafi, Babak   +2 more
core   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

open access: yesSmall, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong   +9 more
wiley   +1 more source

Device and circuit performance analysis of double gate junctionless transistors at L(g) = 18 nm

open access: yesThe Journal of Engineering, 2014
The design and characteristics of double-gate (DG) junctionless (JL) devices are compared with the DG inversion-mode (IM) field effect transistors (FETs) at 45 nm technology node with effective channel length of 18 nm. The comparison are performed at iso-
Chitrakant Sahu, Jawar Singh
doaj   +1 more source

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