Results 41 to 50 of about 2,464,424 (247)
IEEE Access, 2023 In this work, the effect of displacement defect (DD) owing to cosmic rays on six-transistor (6T) static random access memory (SRAM) with a 3 nm node nanosheet field-effect transistor (NSFET) is investigated using technology computer-aided design (TCAD ...
Jonghyeon Ha +5 more
doaj +1 more source
Modeling and Mitigation of Static Noise Margin Variation in Subthreshold SRAM Cells
IEEE Transactions on Circuits and Systems I: Regular Papers, 2017 In energy-constrained applications, SRAM systems operating in the subthreshold region are often deployed to reduce power consumption. Subthreshold SRAM designs, however, confront numerous challenges, such as susceptibility to process variation and reduced ON–OFF current ratio.
Nan Zheng, Pinaki Mazumder
openaire +1 more source
RoundMi: A quantitative method to analyze mitochondrial morphology in mitotic cells
FEBS Open Bio, EarlyView.RoundMi is a workflow for rapid analysis of mitochondrial morphology in mitotic cells. By combining adaptive preprocessing with automated segmentation and quantification, it enables accurate measurements from single focal plane images, reducing acquisition time and computational demands while remaining compatible with high‐throughput fixed and live ...
Elmira Parvindokht Bararpour +2 more
wiley +1 more source
Study on Single Event Upset and Mitigation Technique in JLTFET-Based 6T SRAM Cell
Journal of Electrical and Computer EngineeringThe effect of single event transient (SET) on 6T SRAM cell employing a 20 nm silicon-based junctionless tunneling field effect transistor (JLTFET) is explored for the first time. JLTFET-based SRAM circuit is designed using the look up table-based Verilog
Aishwarya K, Lakshmi B
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CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability
IEEE Journal on Exploratory Solid-State Computational Devices and CircuitsThis work investigates the reliability of complementary field-effect transistors (CFETs) by addressing both design-time variability arising from process variations and run-time variability due to temperature and aging effects.
Sufia Shahin +5 more
doaj +1 more source
Directed evolution of enzymes at the crossroads of tradition and innovation
FEBS Open Bio, EarlyView.An iterative cycle of data‐driven enzyme optimization comprising four stages: genetic diversification of a template enzyme, expression of protein variants, high‐throughput evaluation, and machine‐learning‐guided redesign of the next variant library.
Maria Tomkova +2 more
wiley +1 more source
FEBS Open Bio, EarlyView.KDAC6 has been associated with cell motility and actin structures, but specific domain contributions are not established. The two catalytic domains have differential effects on motility and F‐actin regulation, affecting cortical F‐actin density, motility, stress fibers, and cell spreading.
Taylor V. Joseph +7 more
wiley +1 more source
Scientific ReportsStatic random-access memory (SRAM) design at nanoscale dimensions faces critical challenges arising from degraded stability, excessive power dissipation, and heightened sensitivity to process variations, particularly under low-voltage operation.
Shams Ul Haq +5 more
doaj +1 more source
Performance analysis of OTFT-based SRAM topologies
Memories - Materials, Devices, Circuits and Systems, 2023 In terms of mechanical flexibility, organic SRAM offers better designs and a commercially feasible option with the ability to deliver acceptable performance.
Taniza Marium +4 more
doaj +1 more source
Transient noise failures in SRAM cells: dynamic noise margin metric
, 2011 Current nanometric IC processes need to assess the robustness of memories under any possible source of disturbance: process and mismatch variations, bulk noises, supply rings variations, temperature changes, aging and environmental aggressions such as RF
Figueras Pàmies, Joan +3 more
core +1 more source