Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell [PDF]
Sensors, 2021 Aerospace equipages encounter potential radiation footprints through which soft errors occur in the memories onboard. Hence, robustness against radiation with reliability in memory cells is a crucial factor in aerospace electronic systems.
Bharathi Raj Muthu +6 more
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Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors [PDF]
MicromachinesIn this paper, we investigate the effects of negative bias instability (NBTI) and self-heating effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between SHE and NBTI, we established an NBTI simulation framework based on ...
Xiaoming Li +6 more
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A low-power buffer-assisted 14T ternary SRAM [PDF]
Scientific ReportsTernary static random-access memory (TSRAM) has emerged as a promising solution for enhancing energy efficiency and information density beyond binary limits, particularly in data-intensive and low-power applications. This paper presents a power-efficient
Shams Ul Haq +4 more
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Power optimized variation aware dual-threshold SRAM cell design technique [PDF]
Nanotechnology, Science and Applications, 2011 Aminul Islam1, Mohd Hasan21Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, Jharkhand, India; 2Department of Electronics Engineering, Aligarh Muslim University, Aligarh, Uttar Pradesh, IndiaAbstract ...
Aminul Islam, Mohd Hasan
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Performance evaluation of SRAM design using different field effect transistors [PDF]
E3S Web of Conferences, 2023 SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah +5 more
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Performance analysis of OTFT-based SRAM topologies
Memories - Materials, Devices, Circuits and Systems, 2023 In terms of mechanical flexibility, organic SRAM offers better designs and a commercially feasible option with the ability to deliver acceptable performance.
Taniza Marium +4 more
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Monolithic 3D Inverter with Interface Charge: Parameter Extraction and Circuit Simulation
Applied Sciences, 2021 We have simulated a monolithic three-dimensional inverter (M3DINV) structure by considering the interfacial trap charges generated thermally during the monolithic three-dimensional integration process.
Tae Jun Ahn, Sung Kyu Lim, Yun Seop Yu
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Single-ended 6T SRAM Cell with Low Power/Energy Consumption and High Stability [PDF]
AUT Journal of Electrical Engineering, 2022 In this paper, we propose 6T cell with single-ended characteristics to achieve an improved stability, decrease energy consumption, and decrease leakage power.
Javad Mohagheghi +2 more
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Design Exploration of 14 nm FinFET for Energy-Efficient Cryogenic Computing
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023 Cryogenic operation of CMOS transistors (i.e., cryo-CMOS) effectively brings an ultrasteep subthreshold slope (SS) and ultralow leakage, enabling high energy efficiency with appropriate tuning of threshold voltage and supply voltage.
Amol D. Gaidhane +5 more
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NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity
IEEE Journal of the Electron Devices Society, 2020 The key feature of NCFET (negative capacitance field effect transistor) is its sub-threshold slope (SS) <; 60 mV/decade at 300 K. In this work, the n-type NCFET (i.e., pull-down (PD) and passgate (PG) transistor in six-transistor (6T) SRAM bit-cell ...
Yuri Hong, Yejoo Choi, Changhwan Shin
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