Results 41 to 50 of about 2,469,367 (147)
Global Biogeochemical Cycles, Volume 39, Issue 10, October 2025.Abstract Marine oxygen deficient zones (ODZs) play a major role in the Earth's biogeochemical cycles and are responsible for nitrogen and sulfur removal from the oceans. Microbial‐reducing reaction processes generate nitrite (NO2−) and sulfur compounds as intermediaries that may accumulate in these zones.
Mariana B. Bif, Kenneth S. Johnson
wiley +1 more source
, 2017 We demonstrate ternary CMOS (T-CMOS)-based standard ternary inverter (STI) for compact and powerscalable multi-valued logic (MVL) circuits. The distinguished mechanism of VG-independent junction band-to-band tunneling (BTBT) for ternary logic has been ...
Sunhae Shin +7 more
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Static Noise Margin Evaluation Method Based on Direct Polynomial-Curve-Fitting with Universal SRAM Cell Inverter TEG Measurement [PDF]
A new method to evaluate the static noise margin (SNM) for leading-edge CMOS SRAM development is proposed. This method includes: (1) direct measurement of the inverter DC transfer curves using a "universal SRAM cell inverter TEG (USCIT)" with arbitrary ...
55624478963 +10 more
core +1 more source
Food Frontiers, Volume 6, Issue 4, Page 1954-1971, July 2025.Alpha‐lipoic acid (ALA) plays a significant role in alleviating isoflurane‐induced cognitive dysfunction in juvenile mice by activating PGC‐1α, which improves mitochondrial function and energy metabolism in astrocytes. As a potent antioxidant, ALA is commonly found in foods like spinach, broccoli, and yeast, and its supplementation may offer ...
Xingkai Zhao +4 more
wiley +1 more source
Células SRAM de ultra baixa tensão com polarização de substrato [PDF]
, 2008 Dissertação (Mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-graduação em Engenharia ElétricaEsta dissertação visa o estudo da célula SRAM de 6 transistores, utilizando tecnologia CMOS convencional, operando em ...
Lima, Alessandro de Souza
core
Dynamic stability margin analysis on SRAM [PDF]
, 2009 In the past decade, aggressive scaling of transistor feature size has been a primary force driving higher Static Random Access Memory (SRAM) integration density. Due to the scaling, nanometer SRAM designs are getting more and more stability issues.
Ho, Yenpo
core +2 more sources
Extracting knowledge from customer reviews: an integrated framework for digital platform analytics
International Transactions in Operational Research, Volume 32, Issue 4, Page 2061-2086, July 2025.Abstract Online review sites play a crucial role in shaping consumer purchasing decisions, making the analysis of customer feedback essential for businesses. Given the complexity of these reviews, often including both quantitative and qualitative data, advanced analytical frameworks are necessary.
Anastasios Kyriakidis +1 more
wiley +1 more source
SRAM stability metric under transient noise [PDF]
, 2012 ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static noise. The static immunity to disturbances like process and mi smatch variations, bulk noises, supply rings variations, temperature changes is well ...
Figueras Pàmies, Joan +3 more
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Dynamics of the 2021 Fagradalsfjall Eruption (Iceland) Revealed by Volcanic Tremor Patterns
Journal of Geophysical Research: Solid Earth, Volume 130, Issue 2, February 2025.Abstract Co‐eruptive volcanic tremor during the 2021 Fagradalsfjall eruption in Iceland (19 March–18 September 2021) is characterized using seismic and visual data recorded close to the eruption site and across the Reykjanes Peninsula. An automatic seismic network‐based approach reveals several tremor patterns associated with seven phases of the ...
Jean Soubestre +8 more
wiley +1 more source
IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.The geometrical parameters of the fin‐shaped field‐effect transistor (FinFET) significantly affect the outcomes of the FinFET‐based designs. Various machine learning (ML) schemes have been presented to optimize the geometrical parameters of the FinFET devices to limit the adverse effect of scaling.
Vijayalaxmi Kumbar +2 more
wiley +1 more source