Results 51 to 60 of about 2,469,367 (147)

Impact of NBTI/PBTI on SRAM stability degradation

, 2011
We investigate the impact of negative-bias temperature instability (NBTI) on the degradation of the static noise margin (SNM) and write noise margin (WNM) of a SRAM cell. This is based on the quantitative simulation of the statistical impact of NBTI on p-
Cheng, Binjie, Brown, A.R., Asenov, A., Asen Asenov, Binjie Cheng, Andrew R. Brown   +5 more
core   +1 more source

Variation Tolerant SRAM with Enhanced Stability for Wearable Healthcare Devices

Electronics
As technology scales down CNTFET (Carbon Nano Tube Field Effect Transistor) circuits has gained importance in VLSI design due to exacerbation of process parameter variations in CMOS.
M. Kavitha, S. Ramani, P. K. Janani
doaj   +1 more source

Pathophysiological processes underlying hidden hearing loss revealed in Kcnt1/2 double knockout mice

Aging Cell, Volume 23, Issue 9, September 2024.
We used a novel mouse model combined with transcriptomic profiling as well as morphological and functional assessments to investigate the pathophysiology of hidden hearing loss. We found that hidden hearing loss is linked to transcriptomic alterations indicating disruption in various molecular and cellular pathways in the cochlear sensorineural ...
Nick M. A. Schubert, Daniël O. J. Reijntjes, Marcel van Tuinen, Sarath Vijayakumar, Timothy A. Jones, Sherri M. Jones, Sonja J. Pyott   +6 more
wiley   +1 more source

Analysis and Optimization for Dynamic Read Stability in 28nm SRAM Bitcells

, 2015
The importance of the dynamic analysis for SRAM operation increases as a result of shrinking access cycle time, voltage scaling and increased process variations.
Taha Elthakeb Naguib Youssef, Ahmed, IEEE International Conference on Circuits and Systems (ISCAS 2015), Ismail, Yehea, Bol, David, Flandre, Denis, Elhamid, Hamdy Abd, Haine, Thomas   +6 more
core   +1 more source

CNTFET-based SRAM cell design using INDEP technique

e-Prime: Advances in Electrical Engineering, Electronics and Energy
As the size of the transistor decreases in the nanoscale regime, certain parameters, such as, cell stability, power dissipation, and delay, have changed.
Mehwish Maqbool, Vijay Kumar Sharma, Neeraj Kaushik   +2 more
doaj   +1 more source

A CNTFET-Based 10T Static Memory Design Immune to Read and Half-Select Disturbs for Low-Power Wearable Biomedical Systems

IEEE Access
This paper introduces a novel 10T SRAM cell optimized for low-power, high-reliability biomedical wearable systems. The proposed design features a read-assist mechanism to suppress read disturbs, enhancing read static noise margin (RSNM), while a ...
Shams Ul Haq, Erfan Abbasian, Imran Ahmed Khan, Owais Ahmad Shah, Arun Balodi, Manoj Tolani, Vakkalakula Bharath Sreenivasulu   +6 more
doaj   +1 more source

Static-Noise-Margin Analysis of Modified 6T SRAM Cell during Read Operation

, 2014
—As modern technology is spreading fast, it is very important to design low power, high performance, fast responding SRAM(Static Random Access Memory) since they are critical component in high performance processors.
Nahid Rahman, B. P. Singh, Gaurav Dhiman
core  

Synthesis, Structure and (Photo)Catalytic Behavior of Ce‐MOFs Containing Perfluoroalkylcarboxylate Linkers: Experimental and Theoretical Insights

Chemistry – A European Journal, Volume 30, Issue 31, June 3, 2024.
Ligand‐to‐metal charge transfer potential for photodegradation of organic dyes in new perfluorinated Ce‐MOFs. Abstract Cerium‐based Metal‐Organic frameworks (Ce‐MOFs) are attracting increasing interest due to their similar structural features to zirconium MOFs. The redox behavior of Ce(III/IV) adds a range of properties to the compounds.
Diletta Morelli Venturi, Maria Sole Notari, Letizia Trovarelli, Edoardo Mosconi, Asma A. Alothman, Anastasia Molokova, Niklas Ruser, Christoph Meier, Bastian Achenbach, Kirill A. Lomachenko, Tiziana del Giacco, Ferdinando Costantino, Norbert Stock   +12 more
wiley   +1 more source

Effects of CNT Diameter Variability on a CNFET-Based SRAM

In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on performance and stability of 6-T SRAM cells. Parametric and Monte Carlo simulations are performed for SRAM designs based on different SWCNT mean diameters.
Ahmadi, Arash, Zhong, Yue, Maharatna, Koushik, Shahidipour, Hamed   +3 more
core   +1 more source

Abnormal Operation of 6-T SRAM Based on Nanosheet FET Due to Total Ionizing Dose

IEEE Access
This study investigates the total ionizing dose (TID) effect on the six-transistor static random access memory (6-T SRAM) consisting of a novel device, a nanosheet field effect transistor (NSFET).
Jonghyeon Ha, Minji Bang, Minki Suh, Dabok Lee, Minsang Ryu, Jin-Woo Han, Hyunchul Sagong, Hojoon Lee, Jungsik Kim   +8 more
doaj   +1 more source