Results 21 to 30 of about 2,469,367 (147)

Ultra-Low Power High Stability 8T SRAM for Application in Object Tracking System

IEEE Access, 2018
In this paper, an ultra-low power (ULP) 8T static random access memory (SRAM) is proposed. The proposed SRAM shows better results as compared with conventional SRAMs in terms of leakage power, write static noise margin, write-ability, read margin, and ...
Pooran Singh, Santosh Kumar Vishvakarma
doaj   +1 more source

Performance Projection of Gate-All-Around (GAA)-Based Negative Capacitance Complementary FET (NC-CFET) Relative to Standard CFET

IEEE Journal of the Electron Devices Society
In this article, we have compared the negative capacitance complementary FET (NC-CFET) from a device-circuit perspective with the experimentally demonstrated CFET.
Abhishek Kumar, Shruti Mehrotra, Anand Bulusu, Avirup Dasgupta   +3 more
doaj   +1 more source

On the correlation between Static Noise Margin and Soft Error Rate evaluated for a 40nm SRAM cell

, 2013
International audienceTechnology scaling has brought forth major issues related to process variation such as circuit stability and reliability degradation, which are especially problematic for the Static Random Access Memories (SRAM).
Saigné, Frédéric, P. Girard, Vatajelu, Elena Ioana, A. Bosio, F. Salgne, S. Pravossoudovitch, Wrobel, Frédéric, Virazel, Arnaud, F. Wrobel, Pravossoudovitch, Serge, Girard, Patrick, Bosio, Alberto, A. Todri, Tsiligiannis, Georgios, Elena I. Vatajelu, G. Tsiligiannis, Dilillo, Luigi, L. Dilillo, Todri-Sanial, Aida, A. Virazel   +19 more
core   +1 more source

Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin*

, 2017
In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured.
Xuefeng Yu, Wu Lu, Fazhan Zhao, Jiangwei Cui, Qi Guo, Qiwen Zheng, Dandan Su, Teng Ma, Hang Zhou, Mengxin Liu   +9 more
core   +1 more source

Single ended 12T cntfet sram cell with high stability for low power smart device applications

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Static random-access memory (SRAM) is the most prevalent type of memory used in current system-on-chips (SOC). SRAMs built using Complementary metal oxide semiconductor (CMOS) transistors, suffer from low stability and significant power dissipation at ...
S. Jayanthi, P. Raja, M. Elangovan, T.S. Murugesh   +3 more
doaj   +1 more source

Meniscus‐guided organic semiconductor single crystals: From fluid dynamics to morphology control and multifunctional applications

FlexMat, EarlyView.
Centered on the multiscale meniscus, this review dissects mass transport in meniscus‐guided coating into parallel and lateral components. By analyzing the balance of multiple factors during crystallization, it establishes a clear morphology‐performance relationship.
Yumeng Wang, Shengnan Chen, Lutong Guo, Lujing Shao, Zhenhua Li, Hao Liu, Yanlin Song, Yali Qiao   +7 more
wiley   +1 more source

An SNM Estimation and Optimization Model for ULP sub-45nm CMOS SRAM in the Presence of Variability

, 2010
International audienceThis paper presents an universal optimization model for Static Noise Margin (SNM) of Ultra Low Power (ULP) CMOS SRAMs in the presence of statistical variations.
Makosiej, Adam, Amara Amara, Amara, Amara, Thomas, Olivier, Adam Makosiej, Olivier Thomas, Vladimirescu, Andrei, Andrei Vladimirescu   +7 more
core   +1 more source

Reconfigurable Ternary Logic‐In‐Memory With Organic Antiambipolar Transistor

Advanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.
We develop a ternary logic‐in‐memory with an organic antiambipolar transistor combining a ternary inverter and ternary nonvolatile memory in the same circuit. The memory function of the circuit enables electrical reconfiguration to obtain standard, negative, and positive ternary inverters in the same device.
Ryoma Hayakawa, Taiga Kijima, Yuho Yamamoto, Yoichi Yamada, Yutaka Wakayama   +4 more
wiley   +1 more source

Optimization of Surface Orientation for High-Performance, Low-Power and Robust FinFET SRAM [PDF]

, 2006
We analyze the impact of surface orientation on stability and performance of FinFET SRAMs. We show that devices with proper orientations can improve static noise margin (SNM, 23-35%) and access time (22-33%) of 32nm FinFET SRAM compared to a design with ...
Saakshi Gangwal, Saibal Mukhopadhyay, Kaushik Roy, Gangwal, Saakshi, Roy, Kaushik, Mukhopadhyay, Saibal   +5 more
core   +1 more source

Engineering Photothermal Nanoplatforms for Multimodal Theranostics and Biosensing

Rare Metals, Volume 45, Issue 10, October 2026.
ABSTRACT Photothermal platforms bridge materials science and biomedicine, emerging as a transformative frontier in biomedical applications. They offer spatiotemporally precise, noninvasive modalities with cell‐type‐independent efficacy for treating a range of diseases.
Xiao Han, Peng Jin, Haiqing Wang, Hao Xue   +3 more
wiley   +1 more source