Results 211 to 220 of about 52,126 (300)

Ultraflexible Monolithic Three-Dimensional Static Random Access Memory

ACS Nano
Flexible static random access memory (SRAM) plays an important role in flexible electronics and systems. However, achieving SRAM with a small footprint, high flexibility, and high thermal stability has always been a big challenge. In this work, an ultraflexible six-transistor SRAM with high integration density is realized based on a monolithic three ...
Jiaona Zhang, Wanting Wang, Jiahao Zhu, Chunxiu Wang, Tianyu Zhu, Changbin Zhao, Jialiang Wang, Shengdong Zhang, Xinwei Wang, Kuan-Chang Chang, Hong Meng, Mansun Chan, Min Zhang   +12 more
openaire   +4 more sources

Design of static random access memory using QCA technology

2016 3rd International Conference on Devices, Circuits and Systems (ICDCS), 2016
Quantum dot Cellular Automata(QCA) is one of the emerging trends in the field of nanotechnology which helps to overcome the limitations of CMOS technology. QCA can be used to design memory circuits. Static Random Access Memory (SRAM) is one of the attractive application of QCA technology.
D. Gracia Nirmala Rani, M. Saranya, T. Sivashankari, N. Meenakshi, R. Meena, S. Rajaram   +5 more
openaire   +2 more sources

Solution-processed carbon nanotube thin-film complementary static random access memory

Nature Nanotechnology, 2015
Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits.
Michael L, Geier, Julian J, McMorrow, Weichao, Xu, Jian, Zhu, Chris H, Kim, Tobin J, Marks, Mark C, Hersam   +6 more
openaire   +3 more sources

A Review of Low-Power Static Random Access Memory (SRAM) Designs

2023 IEEE Devices for Integrated Circuit (DevIC), 2023
The growing demand for low-power static random access memory (SRAM) cells in Internet of Things (IoT) devices has led to the development of various SRAM cell topologies that minimize power consumption while maintaining performance and stability.
Neetu Rathi, Anil Kumar, N. Gupta, S. Singh   +3 more
semanticscholar   +1 more source

Total Ionizing Dose Effects on the Power-Up State of Static Random-Access Memory

IEEE Transactions on Nuclear Science, 2023
Power-up states of static random-access memory (SRAM) memories are often used for generating physical unclonable functions (PUFs) in a variety of integrated circuits.
U. Surendranathan, Horace Wilson, M. Wasiolek, K. Hattar, A. Milenković, B. Ray   +5 more
semanticscholar   +1 more source

One‐sided 10T static‐random access memory cell for energy‐efficient and noise‐immune internet of things applications

International journal of circuit theory and applications, 2022
This paper presents a one‐sided 10‐transistors static‐random access memory (SRAM) cell appropriate for the internet of things (IoT) applications in which energy‐efficient SRAM cells are necessary to raise the battery lifetime.
Abdolreza Darabi, M. Salehi, E. Abiri
semanticscholar   +1 more source

Design of a stable single sided 11T static random access memory cell with improved critical charge

International journal of numerical modelling, 2022
Radiation‐induced soft errors are becoming a key challenge in satellite‐based communication. The worst‐hit component of such devices is static random‐access memory bit‐cells, owing to their high density, large area, and low‐operating voltage.
Ashish Sachdeva
semanticscholar   +1 more source

Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications

International journal of circuit theory and applications, 2021
This paper presents an 11 transistor (SEHF11T) static random access memory (SRAM) cell with high read static noise margin (RSNM) and write static noise margin (WSNM).
Erfan Abbasian, M. Gholipour
semanticscholar   +1 more source

Static Response of Three-Dimensional and Printed Complementary Organic TFTs-Based Static Random-Access Memory

IEEE Electron Device Letters, 2022
A three-dimensional (3-D) and printed static random-access memory (SRAM) based on complementary organic thin-film transistors is demonstrated. The SRAM exhibited the smallest area of 2.1 mm2, the highest normalized static noise margin of 62%, and the ...
Woojoon Kim, Sungjune Jung
semanticscholar   +1 more source

Strategical Survey on Static Random Access Memory: A Bibilometric Study

2022 2nd International Conference on Intelligent Technologies (CONIT), 2022
This paper analyzes bibilometrics of articles on Static Random Access Memory, with read and write assist techniques during the period from the year 2011 to 2021. Different Bibliometric analysis methods are used in this study.
Y. Alekhya, U. Nanda
semanticscholar   +1 more source