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Neural Fields for Highly Accelerated 2D Cine Phase Contrast MRI

Advanced Science, EarlyView.
ABSTRACT 2D cine phase contrast (CPC) MRI provides quantitative information on blood velocity and flow within the human vasculature. However, data acquisition is time‐consuming, motivating the reconstruction of the velocity field from undersampled measurements to reduce scan times. In this work, neural fields are proposed as a continuous spatiotemporal
Pablo Arratia, Martin J. Graves, Mary McLean, Carolin Pirkl, Carola‐Bibiane Schönlieb, Timo Schirmer, Florian Wiesinger, Matthias J. Ehrhardt   +7 more
wiley   +1 more source

Dynamic task offloading in vehicular networks using large language models for adaptive low latency decision making. [PDF]

Sci Rep
Trabelsi Z, Ali M, Qayyum T, Tariq A.
europepmc   +1 more source

SRAM based Gaussian noise generation for post quantum cryptography. [PDF]

Sci Rep
Kim MS, Jeon SB, Kim S.
europepmc   +1 more source

Cognitive effects of methamphetamine and amphetamine withdrawal in rodents: a systematic review. [PDF]

Front Psychol
Poorvii R, Mohamed IN, Yahaya MF, Azmi N, Lin TS, Mohamed RMP, Ugusman A, Shanmugam PK, Kumar J.   +8 more
europepmc   +1 more source

Attractor-Based Models for Sequences and Pattern Generation in Neural Circuits. [PDF]

Neural Comput
Alvarez JL, Morrison K, Curto C.
europepmc   +1 more source

An Explainable Markov Chain-Machine Learning Sequential-Aware Anomaly Detection Framework for Industrial IoT Systems Based on OPC UA. [PDF]

Sensors (Basel)
Ghazi Y, Tabaa M, Ennaji M, Zaz G.
europepmc   +1 more source

Dynamic multi-objective aviation maintenance scheduling: an algorithmic framework. [PDF]

Sci Rep
Qi L, Lv C, Zhang T, Wang Y.
europepmc   +1 more source

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2D Materials‐Based Static Random‐Access Memory

Advanced Materials, 2022
Abstract2D transition‐metal dichalcogenide semiconductors, such as MoS2 and WSe2, with adequate bandgaps are promising channel materials for ultrascaled logic transistors. This scalability study of 2D material (2DM)‐based field‐effect transistor (FET) and static random‐access memory (SRAM) cells analyzing the impact of layer thickness reveals that the ...
Yi Wan, Lain-Jong Li, Chih-Pin Lin
exaly   +3 more sources

A 128Kb CMOS static random-access memory

IBM Journal of Research and Development, 1991
This paper describes an all-CMOS 128Kb static random-access memory (SRAM) with emitter-coupled-logic (ECL) I/O compatibility which was designed for the air-cooled Enterprise System/9000™ processors. Access time of 6.5 ns is achieved using 0.5-µm channel length and 1.0-µm minimum geometry. Pipelining and self-resetting circuit techniques permit the chip
Jeff L. Chu, Hamid R. Torabi, Fred J. Towler   +2 more
exaly   +2 more sources