Results 161 to 170 of about 3,273 (179)

Magnetic Shielding and Packaging of STT MRAM

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC), 2018
A magnetic shield was developed for the standard BGA MRAM DDRS chip to increase the magnetic interference tolerance from 100}}oe to more than 500 oetextbf{{. This enabled the low power and fast speed MRAM devices to operate in more rugged conditions. The shield used a soft ferromagnetic material to provide the passive shielding.
Lim Teck Guan, Eva Wai Leong Ching, Lim Wei Yi, Ta-Chien Cheng, Kangho Lee, Jason Janesky, Earl Gow   +6 more
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Test challenges in embedded STT-MRAM arrays

2017 18th International Symposium on Quality Electronic Design (ISQED), 2017
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is an emerging memory technology which exhibits non-volatility, high density and nanosecond read and write times. These attributes of STT-MRAM make it suitable for last level embedded caches.
Insik Yoon, Arijit Raychowdhury
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STT-MRAM - Status and Outlook

2022 IEEE 33rd Magnetic Recording Conference (TMRC), 2022
D. C. Worledge, C. Safranski, G. Hu, J. Z. Sun, P. Hashemi, S. L. Brown, L. Buzi, C. P. D'Emic, M. G. Gottwald, O. Gunawan, H. Jung, S. Karimeddiny, J. Kim, P. L. Trouilloud   +13 more
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PMTJ driven STT MRAM with 300mm process

2015 IEEE Magnetics Conference (INTERMAG), 2015
We will present high performance/low-cost spin transfer torque magnetic random access memory (STT-MRAM) solution based upon 64Mb chip data and scalable magnetic tunneling junction (MTJ) BEOL integration scheme at 55 nm process node. This is the first fully functional STT-MRAM chip fabricated in a top tier foundry using the standard 300 mm CMOS foundry ...
Y. Huai, J. Zhang, Y. Zhou, X. Wang, E. Abedifard, Z. Wang, X. Hao, D. Jung, K. Satoh, H. Gan, B. K. Yen, K. Moon, U. Chandrashekar   +12 more
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Embedded STT-MRAM: Device and Design

2015
Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) is made of a combination of semiconductor integrated circuits (IC) and a dense array of nanometer-scale magnetic tunnel junctions (MTJ). This emerging memory is of growing technological interest due to its potential to bring disruptive device innovation to the world of electronics ...
Seung H. Kang, Seong-Ook Jung
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Reliability of Industrial grade Embedded-STT-MRAM

2020 IEEE International Reliability Physics Symposium (IRPS), 2020
Robust reliability of industrial grade (Tj: -40~125°C) was successfully demonstrated. The reliability items such as HTOL, retention and endurance test showed negligible fail bit count changes with ECC off mode even after accelerated stress conditions for 10yr user life time and come to zero with ECC on mode.
Y. Ji, H. Goo, J. Lim, T. Y. Jeong, T. Uemura, G. R. Kim, B. I. Seo, S. Lee, G. Park, J. Jo, S. I. Han, K. Lee, J. Lee, S. H. Hwang, D. S. Lee, S. Pyo, H. T. Jung, S. H. Han, S. Noh, K. Suh, S. Y. Yoon, H. Nam, H. Hwang, H. Jiang, J. W. Kim, D. Kwon, Y. J. Song, K. H. Koh, H. S. Rhee, S. Pae, E. Lee   +30 more
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Status and outlook of STT-MRAM development

SPIE Proceedings, 2014
MTJ stack is optimized for TMR at low RA region, high PMA and 400oC post annealing capability. Atomic level smooth bottom electrode with 0.5A roughness was developed and positive effects on annealing capability and PMA was demonstrated. The scaling challenge of STT-MRAM read operation down to sub-10nm is discussed.
T. Min, G. S. Kar, J. Swerts, S. Mertens, S. Coseman, J. Bekaert, K. Xu, L. Souriau, D. Radisic, H. Okuyama, K. Nishimura, T. Seino, K. Tsunekawa   +12 more
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Write-optimized reliable design of STT MRAM

Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design, 2012
Spin transfer torque magnetic random access memory (STT MRAM) is a promising non-volatile memory due to its outstanding potential for high integration density and excellent scalability. Despite the attractive features, high write current and power is still a major challenge. As a result, the optimization of the memory for write is critical.In this work,
Yusung Kim, Sumeet Kumar Gupta, Sang Phill Park, Georgios Panagopoulos, Kaushik Roy   +4 more
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A Parametric DFT Scheme for STT-MRAMs

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2019
Process control and yield of spin torque transfer-magnetoresistive random access memory (STT-MRAM) array are of crucial importance in fabrication. While yield depends on the CMOS process variability, quality of the deposited MTJ film, and other process nonidealities, test platform can enable a parametric optimization and verification process using the ...
Govind Radhakrishnan, Youngki Yoon, Manoj Sachdev   +2 more
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High-speed STT MRAM incorporating antiferromagnetic layer

Applied Physics Letters, 2019
A previous theoretical study has shown that spin-polarized current can excite ultra-high frequency spin precessions in collinear antiferromagnetic (AF) films due to the strong antiferromagnetic coupling with the frequency spanning over a wide spectrum from giga-hertz to tera-hertz.
Abir Shadman, Jian-Gang (Jimmy) Zhu
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