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Exploring Applications of STT-RAM in GPU Architectures

IEEE Transactions on Circuits and Systems I: Regular Papers, 2021
Use of modern GPUs has been extended from traditional 3D graphic processing to computing acceleration of many scientific, engineering, and enterprise applications. In modern GPUs, on-chip memory capacity keeps increasing to support thousands of chip-resident threads.
Xiaoxiao Liu   +4 more
openaire   +1 more source

Multi-level cell STT-RAM

Proceedings of the International Conference on Computer-Aided Design, 2012
Spin-transfer torque random access memory (STT-RAM) is a promising nonvolatile memory technology aiming on-chip or embedded applications. In recent years, many researches have been conducted to improve the storage density and enhance the scalability of STT-RAM, such as reducing the write current and switching time of magnetic tunneling junction (MTJ ...
Yaojun Zhang   +4 more
openaire   +1 more source

Compiler-Assisted Refresh Minimization for Volatile STT-RAM Cache

IEEE Transactions on Computers, 2013
Spin-Transfer Torque RAM (STT-RAM) has been proposed to build on-chip caches because of its attractive features: high storage density and negligible leakage power. Recently, researchers propose to improve the write performance of STT-RAM by relaxing its non-volatility property. To avoid data loss resulting from volatility, refresh schemes are proposed.
null Qingan Li   +5 more
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Self-Terminated Write-Assist Technique for STT-RAM

IEEE Transactions on Magnetics, 2016
The main challenge in the programming of spin transfer torque (STT)-RAM is to reduce the associated power consumption without the increase in area. This paper proposes a novel self-terminated write-assist technique to cutoff the unnecessary writing power consumption and then compares its delay and writing power consumption with the previously reported ...
Mohit Kumar Gupta, Mohd. Hasan
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Endurance enhancement of write-optimized STT-RAM caches

Proceedings of the International Symposium on Memory Systems, 2019
Low density and high leakage power of SRAM are the major setbacks for its scalability. Non-volatile memory (NVM) like spin-transfer torque random access memory (STT-RAM) is a suitable replacement for SRAM at the last level cache (LLC). NVM offers high density, and near zero leakage, which are highly desired for on-chip caches.
Puneet Saraf, Madhu Mutyam
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Ternary cache: Three-valued MLC STT-RAM caches

2014 IEEE 32nd International Conference on Computer Design (ICCD), 2014
Spin-transfer torque random access memory (STT-RAM) has become a promising non-volatile memory technology for cache memories. Recently, 2-bit multi-level cell (MLC) STT-RAM has been proposed to enhance data density, but it suffers from low reliability of its read and write operations. In this paper, we propose a novel cache design called Ternary cache.
Seokin Hong, Jongmin Lee, Soontae Kim
openaire   +1 more source

An efficient STT-RAM last level cache architecture for GPUs

2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC), 2014
In this paper, having investigated the behavior of GPGPU applications, we present an efficient L2 cache architecture for GPUs based on STT-RAM technology. With the increase of processing cores count, larger on-chip memories are required. Due to its high density and low power characteristics, STT-RAM technology can be utilized in GPUs where numerous ...
Mohammad Hossein Samavatian   +3 more
openaire   +1 more source

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