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Promoting MLC STT-RAM for the Future Persistent Memory System
2017 IEEE 15th Intl Conf on Dependable, Autonomic and Secure Computing, 15th Intl Conf on Pervasive Intelligence and Computing, 3rd Intl Conf on Big Data Intelligence and Computing and Cyber Science and Technology Congress(DASC/PiCom/DataCom/CyberSciTech), 2017 As the memory wall issue continues in the era of big data, researchers have been exploring emerging technologies to replace or complement the current DRAM based main memory system. Among them, Multi-Level Cell (MLC) configurations of Spin-Transfer Torque Random Access Memory (STT-RAM) attracts tremendous interests and has been deployed as the onchip ...
Xunchao Chen +2 more
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Exploring Applications of STT-RAM in GPU Architectures
IEEE Transactions on Circuits and Systems I: Regular Papers, 2021Use of modern GPUs has been extended from traditional 3D graphic processing to computing acceleration of many scientific, engineering, and enterprise applications. In modern GPUs, on-chip memory capacity keeps increasing to support thousands of chip-resident threads.
Xiaoxiao Liu 0001 +4 more
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Adaptive Placement and Migration Policy for an STT-RAM-Based Hybrid Cache
, 2014 Emerging Non-Volatile Memories (NVM) such as Spin-Torque Transfer RAM (STT-RAM) and Resistive RAM (RRAM) have been explored as potential alternatives for traditional SRAM-based Last-Level-Caches (LLCs) due to the benefits of higher density and lower ...
Daniel A. Jiménez +2 more
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Proceedings of the International Conference on Computer-Aided Design, 2012
Spin-transfer torque random access memory (STT-RAM) is a promising nonvolatile memory technology aiming on-chip or embedded applications. In recent years, many researches have been conducted to improve the storage density and enhance the scalability of STT-RAM, such as reducing the write current and switching time of magnetic tunneling junction (MTJ ...
Yaojun Zhang +4 more
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Spin-transfer torque random access memory (STT-RAM) is a promising nonvolatile memory technology aiming on-chip or embedded applications. In recent years, many researches have been conducted to improve the storage density and enhance the scalability of STT-RAM, such as reducing the write current and switching time of magnetic tunneling junction (MTJ ...
Yaojun Zhang +4 more
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When to forget: A system-level perspective on STT-RAMs
17th Asia and South Pacific Design Automation Conference, 2012The benefits of using STT-RAMs as an alternative to SRAMs are being examined in great detail. However their comparatively higher write latencies and energies continue to be roadblocks for migrating to MRAM based technology in memory hierarchies. In this paper, we present a novel method by which we demonstrate significant energy reduction in writing to ...
Karthik Swaminathan +3 more
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Enhancing the lifetime of STT-RAM with MRU replacement algorithm
2018 4th International Conference on Recent Advances in Information Technology (RAIT), 2018Recent trends on Emerging Technologies of Non-Volatile Memory (NVM) were considered as better alternatives for SRAM. Spin-Transfer Torque Random Access Memory (STT-RAM) is a type of NVM having less leakage power and high cell density. Besides its advantages, NVM has low write endurance and high error rates.
Bhukya Krishna Priya +3 more
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STT-RAM read stability in DRAM operating region
2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015Spin-transfer-torque RAM (STT-RAM) is the most promising candidate for replacing DRAM while gaining an additional function of non-volatility. The relationship between rapid increase of spin-inversion current and stability of read operation (read disturbance) in the DRAM-array operating time region of less than 10 ns (i.e., "fast" region) was examined ...
H. Kazama, Takayuki Kawahara
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Volatile STT-RAM Scratchpad Design and Data Allocation for Low Energy [PDF]
Transactions on Architecture and Code Optimization, 2015 [Abstract] On-chip power consumption is one of the fundamental challenges of current technology scaling. Cache memories consume a sizable part of this power, particularly due to leakage energy.
Juan Touriño +2 more
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Asymmetry in STT-RAM Cell Operations
2013Spin-transfer torque random access memory (STT-RAM) has emerged as a promising technology to replace SRAM and DRAM in embedded memory applications. In STT-RAM, the data are stored in a magnetic device (magnetic tunneling junction or MTJ) as different resistance states.
Yaojun Zhang, Wujie Wen, Yiran Chen
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A dual-mode architecture for fast-switching STT-RAM
Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design, 2012In the past, the spin-transfer torque RAM (STT-RAM) suffered from the slow write speed and the high write energy consumption. The latest progress in device engineering has dramatically reduced the write time to a few nanoseconds and hence enabled the fast-switching STT-RAM (FS-STT-RAM).
Zhenyu Sun 0001, Hai Li 0001, Wenqing Wu
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