Results 151 to 160 of about 1,678 (162)

STT-RAM Cell Optimization Considering MTJ and CMOS Variations

IEEE Transactions on Magnetics, 2011
Spin-transfer torque random access memory (STT-RAM) becomes a promising technology for future computing systems for its fast access time, high density, nonvolatility, and small write current. However, like all the other nanotechnologies, STT-RAM suffers from process variations and environment fluctuations, which significantly affect the performance and
Yaojun Zhang, Xiaobin Wang, Hai Li, Yiran Chen   +3 more
openaire   +1 more source

Giant Spin-Hall assisted STT-RAM and logic design

Integration, 2017
Abstract In recent years, Spin-Transfer Torque Random Access Memory (STT-RAM) has attracted significant attentions from both industry and academia due to its attractive attributes such as small cell area and non-volatility. However, long switching time and large programming energy of Magnetic Tunneling Junction (MTJ) continue being major challenges ...
Enes Eken, Ismail Bayram, Yaojun Zhang, Bonan Yan, Wenqing Wu, Hai (Helen) Li, Yiran Chen   +6 more
openaire   +1 more source

Modeling STT-RAM fabrication cost and impacts in NVSim

2016 Seventh International Green and Sustainable Computing Conference (IGSC), 2016
Reducing power consumption of computational systems in the use-phase has become a significant focus to decrease thermal impacts and overall energy consumption of computing systems while having battery life benefits for increasingly mobile computing products.
Ismail Bayram, Enes Eken, Donald Kline, Nikolas Parshook, Yiran Chen, Alex K. Jones   +5 more
openaire   +1 more source

STT-RAM Designs Supporting Dual-Port Accesses

Design, Automation & Test in Europe Conference & Exhibition (DATE), 2013, 2013
Xiuyuan Bi, Mohamed Anis Weldon, Hai Li
openaire   +1 more source

Statistical Reliability/Energy Characterization in STT-RAM Cell Designs

2015
Spin-transfer torque random access memory (STT-RAM) is a very promising candidate to replace the SRAM and DRAM based traditional memory systems. However, the development of STT-RAM is facing two major technical challenges—poor write reliability and high write energy, both of which are severely impacted by process variations and thermal fluctuations ...
Wujie Wen, Yaojun Zhang, Yiran Chen
openaire   +1 more source

A Novel L1 Cache Based on Volatile STT-RAM

2016
Spin-transfer torque random access memory (STT-RAM) is one of the most promising substitutes for universal main memory and cache due to its excellent scalability, high density and low leakage power. Nevertheless, the current non-volatile STT-RAM cache architecture also has some drawbacks, such as long write latency and high write energy, which limit ...
Zhang Hongguang, Zhang Minxuan
openaire   +1 more source

Spin Transfer Torque RAM (STT-RAM) Technology

Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, 2007
Y. Huai, Z. Diao, Y. Ding, A. Panchula, S. Wang, Z. Li, D. Apalkov, X. Luo, H. Nagai, A. Driskill-Smith, E. Chen   +10 more
openaire   +1 more source

The Prospect of STT-RAM Scaling

2017
Yaojun Zhang, Wujie Wen, Hai Li, Yiran Chen   +3 more
openaire   +1 more source

The STeTSiMS STT-RAM simulation and modeling system

2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 2011
Clinton W. Smullen, Anurag Nigam, Sudhanva Gurumurthi, Mircea R. Stan   +3 more
openaire   +1 more source

Unleashing the potential of MLC STT-RAM caches

2013 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 2013
Xiuyuan Bi, Mengjie Mao, Danghui Wang, Hai Li   +3 more
openaire   +1 more source