Results 181 to 190 of about 129,221 (220)

Asymmetry in STT-RAM Cell Operations

2013
Spin-transfer torque random access memory (STT-RAM) has emerged as a promising technology to replace SRAM and DRAM in embedded memory applications. In STT-RAM, the data are stored in a magnetic device (magnetic tunneling junction or MTJ) as different resistance states.
Yaojun Zhang, Wujie Wen, Yiran Chen
openaire   +1 more source

An Energy-Efficient Scheme for STT-RAM L1 Cache

2013 IEEE 10th International Conference on High Performance Computing and Communications & 2013 IEEE International Conference on Embedded and Ubiquitous Computing, 2013
Spin-Transfer Torque RAM (STT-RAM) is a promising cache candidate studied frequently in recent years. Compared to the traditional SRAM, The STT-RAM is more promising for future on-chip caches due to STT-RAM's long endurance, low leakage, high density and high access speed.
Jun Yao, Jianliang Ma, Tianzhou Chen, Tongsen Hu   +3 more
openaire   +1 more source

Compiler-Assisted Refresh Minimization for Volatile STT-RAM Cache

IEEE Transactions on Computers, 2013
Spin-Transfer Torque RAM (STT-RAM) has been proposed to build on-chip caches because of its attractive features: high storage density and negligible leakage power. Recently, researchers propose to improve the write performance of STT-RAM by relaxing its non-volatility property. To avoid data loss resulting from volatility, refresh schemes are proposed.
Qing'an Li, Jianhua Li 0003, Liang Shi 0001, Chun Jason Xue, Yiran Chen 0001, Yanxiang He   +5 more
openaire   +1 more source

A Compile-Time Framework for Tolerating Read Disturbance in STT-RAM

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2021
Spin-transfer torque magnetic random access memory (STT-RAM) is one of the most promising candidates for next-generation on-chip memories. While STT-RAM offers high density, negligible leakage power, and fast access speed, it also suffers from read-disturbance errors , that is, read operations might accidentally change the value of the accessed memory
Fateme S. Hosseini, Chengmo Yang
openaire   +1 more source

An efficient STT-RAM last level cache architecture for GPUs

2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC), 2014
In this paper, having investigated the behavior of GPGPU applications, we present an efficient L2 cache architecture for GPUs based on STT-RAM technology. With the increase of processing cores count, larger on-chip memories are required. Due to its high density and low power characteristics, STT-RAM technology can be utilized in GPUs where numerous ...
Mohammad Hossein Samavatian, Hamed Abbasitabar, Mohammad Arjomand, Hamid Sarbazi-Azad   +3 more
openaire   +1 more source

A Novel L1 Cache Based on Volatile STT-RAM

2016
Spin-transfer torque random access memory (STT-RAM) is one of the most promising substitutes for universal main memory and cache due to its excellent scalability, high density and low leakage power. Nevertheless, the current non-volatile STT-RAM cache architecture also has some drawbacks, such as long write latency and high write energy, which limit ...
Hongguang Zhang, Minxuan Zhang
openaire   +1 more source

Synthesis and Analysis of STT-RAM Switching Characteristics

2016 8th International Conference on Computational Intelligence and Communication Networks (CICN), 2016
Spin transfer torque random access memory is a latest cutting edge memory technology which is suitable to be considered for universal memory. In Spin transfer torque random access memory, the magnetic state of magnetic tunneling junction is switched by passing the spin-polarized current through the junction.
Abdul Kadeer Moin, V. Sulochana, null Anurag   +2 more
openaire   +1 more source

Enhancing the Lifetime of STT-RAM by IFTRP

Engineering Research Express
Abstract Spin Transfer Torque Random Access memory (STT-RAM) is a better alternative to overcome the shortcomings of the existing memory technologies. But, the implementation of STT-RAM memory technologies on the existing memory are limited due to its write restriction.
Bhukya Krishna Priya, Bhukya Krishna Naick, N Ramasubramanian   +2 more
openaire   +1 more source

Energy reduction for STT-RAM using early write termination

Proceedings of the 2009 International Conference on Computer-Aided Design, 2009
The emerging Spin Torque Transfer memory (STT-RAM) is a promising candidate for future on-chip caches due to STT-RAM's high density, low leakage, long endurance and high access speed. However, one of the major challenges of STT-RAM is its high write current, which is disadvantageous when used as an on-chip cache since the dynamic power generated is too
Ping Zhou, Bo Zhao 0007, Jun Yang 0002, Youtao Zhang   +3 more
openaire   +1 more source

Ternary cache: Three-valued MLC STT-RAM caches

2014 IEEE 32nd International Conference on Computer Design (ICCD), 2014
Spin-transfer torque random access memory (STT-RAM) has become a promising non-volatile memory technology for cache memories. Recently, 2-bit multi-level cell (MLC) STT-RAM has been proposed to enhance data density, but it suffers from low reliability of its read and write operations. In this paper, we propose a novel cache design called Ternary cache.
Seokin Hong, Jongmin Lee 0002, Soontae Kim   +2 more
openaire   +1 more source