Results 1 to 10 of about 141,240 (252)
MXene based saturation organic vertical photoelectric transistors with low subthreshold swing [PDF]
Nature Communications, 2022 The modulation of Schottky barrier, which dominates the carrier injection in vertical organic field-effect transistors, strongly depends on the source electrode. Here, Chen et al.
Enlong Li +8 more
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ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior [PDF]
Nanoscale Research Letters, 2021 Here we report the ZrO x -based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V GS range, which can achieve new opportunities in future voltage-scalable NCFET applications.
Siqing Zhang +5 more
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A novel ultra-steep subthreshold swing iTFET with control gate and control source biasing [PDF]
Scientific ReportsIn this paper, we propose a novel structure with Control Source and Control Gate structured tunnel field-effect transistor (CSCG‑iTFET), which achieves an unprecedentedly steep subthreshold swing (SS) while maintaining high ON-state current ( $$\:{I}_ ...
Jyi-Tsong Lin, Ruei-Cheng Tu
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Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain [PDF]
Beilstein Journal of NanotechnologyIn this research paper, a vertical tunnel field-effect transistor (TFET) structure containing a live metal strip and a material with low dielectric constant is designed, and its performance metrics are analyzed in detail.
Kalai Selvi Kanagarajan +1 more
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Subthreshold-swing physics of tunnel field-effect transistors
AIP Advances, 2014 Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS) below 60 mV/decade.
Wei Cao +4 more
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Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit
Computational Materials TodayThe continuous miniaturization of field-effect transistors (FETs) has propelled microprocessors to unprecedented levels of integration. However, further scaling encounters a critical trade-off between integration density and power efficiency.
Weiming Zhang +4 more
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Results in Physics, 2021 Continuous downscaling of CMOS technology at the nanometer scale with conventional MOSFETs leads to short channel effects (SCE), increased subthreshold slope (SS), and leakage current, degrading the performance of ICs.
Minhaz Uddin Sohag +5 more
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Performance Analysis of an α-Graphyne Nano-Field Effect Transistor
Micromachines, 2023 Graphyne has attractive electronic properties that make it a possible replacement of silicon in FET technology. In FET technology, the goal is to achieve low power dissipation and lower subthreshold swing.
Habibullah Khan +4 more
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Subthreshold Conduction of Disordered ZnO-Based Thin-Film Transistors
Micromachines, 2023 This study presents the disorderedness effects on the subthreshold characteristics of atomically deposited ZnO thin-film transistors (TFTs). Bottom-gate ZnO TFTs show n-type enhancement-mode transfer characteristics but a gate-voltage-dependent ...
Minho Yoon
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IEEE Access, 2021 In this paper, with the help of calibrated 2-D simulations, we report a detailed study on the effect of drain induced barrier enhancement on the subthreshold swing and OFF-state current of a short channel MOSFET.
Mamidala Karthik Ram +3 more
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