Results 91 to 100 of about 141,240 (252)

Highly Sensitive Heterojunction‐Gated Phototransistor With Detection Wavelength Ranged From 350 to 1700 Nm

Advanced Science, EarlyView.
This work demonstrates a heterojunction‐gated infrared phototransistor for broadband detection from 350 to 1700 nm. By suppressing defect states on nonpolar (100) facets of large PbS quantum dots via hybrid ligand passivation, the device achieves a room‐temperature detectivity of 5.7 × 1013 Jones at 1650 nm.
Hongkun Duan, Wenyu Zhang, Tao Luo, XiaoLu Xia, Qianxi Yang, Ying Yan, Shengmei Gao, Xitian Yin, Yixiao Niu, Zhiyu Zhao, Jianbing Zhang, Haobin He, Jiang Tang, Ying Wang, Zhiyong Zhang   +14 more
wiley   +1 more source

Towards Graphene Nanoribbon-based Electronics

, 2010
The successful fabrication of single layer graphene has greatly stimulated the progress of the research on graphene. In this article, focusing on the basic electronic and transport properties of graphene nanoribbons (GNRs), we review the recent progress ...
A. Bostwick, A. Cresti, A. Dato, A. H. Castro Neto, A. J. M. Giesbers, A. Javey, A. K. Geim, A. Reina, A. Rycerz, B. Huang, Bing Huang, C. Berger, C. H. Park, C. L. Kane, C. W. J. Beenakker, D. A. Abanin, D. A. Areshkin, D. A. Areshkin, E. J. Kan, E. Rudberg, F. Schedin, G. Li, G. Liang, H. Duan, I. Meric, J. R. Williams, J. T. Robinson, K. S. Kim, K. S. Novoselov, K. S. Novoselov, K. S. Novoselov, K. S. Novoselov, K. Todd, K. Wakabayashi, L. Tapasztó, M. I. Katsnelson, M. I. Katsnelson, O. Hod, P. Avouris, P. W. Sutter, Q. Yan, Qi-min Yan, R. V. Gorbachev, S. Dutta, S. S. Datta, S. Y. Zhou, T. O. Wehling, T. Ohta, V. Barone, V. C. Tung, W. Y. Kim, Wen-hui Duan, X. Fan, X. Li, X. Liang, Y. Hernandez, Y. Miyamoto, Y. W. Son, Y. Zhang, Z. Chen, Z. Q. Li, Zuan-yi Li   +61 more
core   +1 more source

Gate‐Dielectric Surface Engineering With Fluorinated Monolayers: Minimizing Contact Resistance and Nonidealities in OFETs

Advanced Electronic Materials, EarlyView.
Surface engineering of gate dielectrics with fluorinated self–assembled monolayers significantly improves the performance of organic field–effect transistors. In this study, Al2O3 functionalized with fluorinated phosphonic acids reduces contact resistance and hysteresis while achieving near‐zero threshold voltages, offering an alternative to ...
Shaghayegh Mesforush, Alba Cazorla, Hayley Melville, Philippe Blanchard, Hagen Klauk, Ute Zschieschang, Min Zhang, Lamiaa Fijahi, Marta Mas‐Torrent, Esther Barrena   +9 more
wiley   +1 more source

Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness

AIP Advances, 2013
RF magnetron sputtered HfInZnO film and atomic layer deposition (ALD) Al2O3 film were employed for thin film transistors (TFTs) as channel layer and gate insulator, respectively.
Jun Li, Xing-Wei Ding, Jian-Hua Zhang, Hao Zhang, Xue-Yin Jiang, Zhi-Lin Zhang   +5 more
doaj   +1 more source

Analytical Performance of the Threshold Voltage and Subthreshold Swing of CSDG MOSFET

Journal of Low Power Electronics and Applications, 2019
In this research work, the threshold voltage and subthreshold swing of cylindrical surrounding double-gate (CSDG) MOSFET have been analyzed. These analyses are based on the analytical solution of 2D Poisson equation using evanescent-mode analysis (EMA ...
Uchechukwu A. Maduagwu, V. Srivastava
semanticscholar   +1 more source

Life‐Cycle Assessment of Printed Electronic Components ‐ Case Study for Organic Electrochemical Transistors

Advanced Electronic Materials, EarlyView.
This tutorial introduces a practical framework for implementing early‐stage Life‐Cycle Assessment (LCA) in flexible and printed electronics. Using organic electrochemical transistors (OECTs) as a case study, the modular Process‐of‐Record and open‐access inventory provides a rich resource adaptable to a plethora of technologies in printed electronics ...
Laura Teuerle, Tommy Meier, Klara Hänisch, Finn Jaekel, Yeohoon Yoon, Andreas Wendel, Hans Kleemann   +6 more
wiley   +1 more source

Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Nature Communications, 2020
Here, the authors demonstrate an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV/dec ...
Qilin Hua, Guoyun Gao, Chunsheng Jiang, Jinran Yu, Junlu Sun, Taiping Zhang, Bin Gao, Weijun Cheng, Renrong Liang, He Qian, Weiguo Hu, Qijun Sun, Zhong Lin Wang, Huaqiang Wu   +13 more
doaj   +1 more source

A DC Compact Model of an Organic Electrochemical Transistor Based on a Semiconductor Physics and Thermodynamic Approach

Advanced Electronic Materials, EarlyView.
This work presents a physics‐based DC compact model of an Organic Electrochemical Transistor (OECT) that takes into account the faradaic redox reaction in the above threshold regime and incorporates the diffusive current of the subthreshold regime based on semiconductor physics.
Ermias Telahun Teka, Yeohoon Yoon, Laura Teuerle, Tommy Meier, Hans Kleemann, Ghader Darbandy, Benjamin Iniguez   +6 more
wiley   +1 more source

Ferroelectricity of HfZrO₂ in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

IEEE Journal of the Electron Devices Society, 2015
The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications.
Min Hung Lee, Y.-T. Wei, C. Liu, J.-J. Huang, Ming Tang, Yu-Lun Chueh, K.-Y. Chu, Miin-Jang Chen, Heng-Yuan Lee, Yu-Sheng Chen, Li-Heng Lee, Ming-Jinn Tsai   +11 more
doaj   +1 more source

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Nature Communications, 2020
Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed.
Xiuyan Li, Akira Toriumi
doaj   +1 more source