Results 101 to 110 of about 141,240 (252)

Inkjet‐Printed Metal Halide Perovskite Thin‐Film Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
Inkjet printing is investigated as a sustainable alternative to spin coating for the fabrication of perovskite thin‐film transistors. By exploring full‐substrate printing and in‐channel printing approaches, key advantages and challenges toward fully printed perovskite based electronic circuits are identified.
Claas Wieland, Felix Hermerschmidt, Vincent R. F. Schröder, Daniel Steffen Rühl, Emil J. W. List‐Kratochvil   +4 more
wiley   +1 more source

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

Advanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis, Anastasia Soultati, Leonidas C. Palilis, Ermioni Polydorou, Konstantinos Davazoglou, Petros‐Panagis Filippatos, Goutham Raj Perumallapelli, Ravindra Naik Bukke, Abd. Rashid bin Mohd Yusoff, Ilhwan Ryu, Peng Gao, Alexander Chroneos, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou   +13 more
wiley   +1 more source

Demonstration of Steep Switching Behavior Based on Band Modulation in WSe₂ Feedback Field-Effect Transistor

Nanomaterials
Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~1010. However, their structural complexity, such as an epitaxy process after an etch process for a Si channel ...
Seung-Mo Kim, Jae Hyeon Jun, Junho Lee, Muhammad Taqi, Hoseong Shin, Sungwon Lee, Haewon Lee, Won Jong Yoo, Byoung Hun Lee   +8 more
doaj   +1 more source

Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit

IEEE Journal of the Electron Devices Society, 2020
The high performance Hf doped ZnO (Hf-ZnO) flexible thin film transistors (TFTs) were fabricated using Ag NWs as gate electrode and high-k HfO2 as dielectric.
Jialong Wu, Jun Yang, Xuyong Yang, Xingwei Ding   +3 more
doaj   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs

IEEE Access, 2019
Tunnel field-effect transistors (TFETs) are promising for use in ultralow-power applications owing to their distinct band-to-band tunneling operation.
Xiangzhan Wang, Zhouquan Tang, Lei Cao, Jingchun Li, Yang Liu   +4 more
semanticscholar   +1 more source

Precise Tailoring of Charge Transport Characteristics in Zr and Hf Doped Indium Tin Oxide Thin Film Transistors

Advanced Electronic Materials, EarlyView.
Zirconium, hafnium, and mixed zirconium/hafnium doped indium tin oxide thin films are accessible by atomic layer deposition. The amorphous functional films are about 8 nm thick and show a high interdiffusion of all elements. Their transistor characteristics can be modulated depending on the amount of Zr and Hf oxide phases incorporated in these thin ...
Marie Isabelle Büschges, Christian Dietz, Vanessa Trouillet, Ann‐Christin Dippel, Fernando Igoa Saldaña, Jörg J. Schneider   +5 more
wiley   +1 more source

High performance MoS2 TFT using graphene contact first process

AIP Advances, 2017
An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 ...
Chih-Shiang Chang Chien, Hsun-Ming Chang, Wei-Ta Lee, Ming-Ru Tang, Chao-Hsin Wu, Si-Chen Lee   +5 more
doaj   +1 more source

Fully CMOS‐Compatible 3‐T Embedded NOR Flash Memory Achieving 28 ns Long‐Term Potentiation/Long‐Term Depression for High‐Speed Online Training Accelerators

Advanced Intelligent Systems, EarlyView.
A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo, Kyoung Min Choi, Geun Tae Park, Jin Ho Chang, Woo Young Choi   +4 more
wiley   +1 more source

Gate engineering solutions to mitigate short channel effects in a 20 nm MOSFET

e-Prime: Advances in Electrical Engineering, Electronics and Energy
This work presents a promising approach to addressing scaling challenges in advanced MOSFET technology. It proposes a novel MOSFET structure designed to enhance electrical performance by introducing asymmetry in the gate dielectric thickness.
Ahmed S. Al-Jawadi, Mohammad Tariq Yaseen, Qais Thanon Algwari   +2 more
doaj   +1 more source