Results 111 to 120 of about 141,240 (252)

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, EarlyView.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

IEEE Journal of the Electron Devices Society, 2018
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept.
Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee   +14 more
doaj   +1 more source

Hybrid Convolutional Neural Network‐Analytical Model for Prediction of Line Edge Roughness‐Induced Performance Variations in Fin‐Shaped Field‐Effect Transistor Devices and SRAM

Advanced Intelligent Systems, EarlyView.
This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim, Myongjin Kim, Changwoo Han, Hyoung Won Baac, Changhwan Shin   +4 more
wiley   +1 more source

A two-dimensional analytical model for short channel junctionless double-gate MOSFETs

AIP Advances, 2015
A physics-based analytical model of electrostatic potential for short-channel junctionless double-gate MOSFETs (JLDGMTs) operated in the subthreshold regime is proposed, in which the full two-dimensional (2-D) Poisson’s equation is solved in channel ...
Chunsheng Jiang, Renrong Liang, Jing Wang, Jun Xu   +3 more
doaj   +1 more source

Initial dynamics of the EKG during an electrical defibrillation of the heart [PDF]

In tests on 11 mature dogs, immobilized by means of an automatic blocking and synchronization system, artefact free EKG were obtained, beginning 0.04-0.06 sec after passage of a defibrillating current. Different versions of the start of fibrillation were
Bikov, I. I., Chebotarov, Y. P., Nikolaev, V. G.   +2 more
core   +1 more source

Cuneiform Nucleus Stimulation Can Assist Gait Training to Promote Locomotor Recovery in Individuals With Incomplete Tetraplegia

Annals of Neurology, EarlyView.
Objective Impaired ability to induce stepping after incomplete spinal cord injury (SCI) can limit the efficacy of locomotor training, often leaving patients wheelchair‐bound. The cuneiform nucleus (CNF), a key mesencephalic locomotor control center, modulates the activity of spinal locomotor centers via the reticulospinal tract.
Anna‐Sophie Hofer, Lennart H. Stieglitz, Marc Bolliger, Linard Filli, Adrian Cathomen, Romina Willi, Irina Lerch, Iris Krüsi, Melina Giagiozis, Christian Meyer, Martin Schubert, Michèle Hubli, Thomas M. Kessler, László Demkó, Christian R. Baumann, Lukas Imbach, Markus F. Oertel, Andrea Prusse, Alina Kiseleva, Luca Regli, Martin E. Schwab, Armin Curt   +21 more
wiley   +1 more source

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement. [PDF]

Discov Nano, 2023
Lin JT, Weng SC.
europepmc   +1 more source

High-Performance Air-Stable Polymer Monolayer Transistors for Monolithic 3D CMOS logics. [PDF]

Adv Mater
A fibrillar polymer monolayer with a self‐confinement effect is demonstrated, in which aligned chains parallel the nanofiber axis. Employing a top‐gate CYTOP dielectric, this monolayer transistor achieves high mobility (7.12 cm2 V−1 s−1) and exceptional stability over 1260 days in air.
Cheng M, Zhang Y, Wang J, Wang H, Xie Y, Zhang S, Liu C, Chu J, Zhang F, Yang Z, Zheng Z, Wu M, Li L, Li M.   +13 more
europepmc   +2 more sources

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe₂ Field‐Effect Transistors

Advanced Electronic Materials
AbstractThe pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs). This challenge is particularly pronounced in 2D material‐based FETs, where the presence of a large interface trap density (Dit) imposes limitations on electrostatic control, consequently ...
Fida Ali, Hyungyu Choi, Nasir Ali, Yasir Hassan, Tien Dat Ngo, Faisal Ahmed, Won‐Kyu Park, Zhipei Sun, Won Jong Yoo   +8 more
openaire   +3 more sources