Results 121 to 130 of about 141,240 (252)

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

InfoMat, EarlyView.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang   +11 more
wiley   +1 more source

High‐mobility suspended MoS2 devices with tunable threshold voltage

InfoMat, EarlyView.
Due to their atomic‐scale thickness, two‐dimensional materials (2DMs) are highly sensitive to their environment, including the substrate. By fabricating various suspended molybdenum disulfide devices, this study demonstrates that the suspended structure can shield the influence of the substrate on the properties of 2DMs, thereby enabling better ...
Jiahao Yan, Xu Han, Dongke Rong, Zhaoxu Chen, Xinyue Li, Yehua Yang, Yingbei Huang, Tongtong Xue, Jiakai Wang, Zihao Guo, Shiqi Yang, JingHan Zhao, Yunyun Dai, Yang Chai, Jian‐gang Guo, Xia Liu, Yuan Huang, Yeliang Wang   +17 more
wiley   +1 more source

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric. [PDF]

Membranes (Basel), 2021
Liu Y, Liu C, Qin H, Peng C, Lu M, Chen Z, Zhao Y.   +6 more
europepmc   +1 more source

Cyclothymic‐hypersensitive temperament in early adolescence: Longitudinal measurement invariance and associations with psychopathology over time

JCPP Advances, EarlyView.
Abstract Background Cyclothymic‐Hypersensitive Temperament (CHT) is characterised by mood instability, interpersonal hypersensitivity, and emotional hyperreactivity, traits frequently observed in general population as well as clinical settings but often eluding strict diagnostic classifications.
Anna Pezzella, Pietro Buono, Nadia Marani, Luisa Almerico, Alessandra Carta, Maria Nobile, Carmela Bravaccio, Gennaro Catone, Vincenzo Paolo Senese, Simone Pisano   +9 more
wiley   +1 more source

Investigation of the Dielectric and Electrical Properties of Poly(chloro‐p‐xylylene) (Parylene‐C) Layers for Controlling Charge Transport in Organic Field‐Effect Transistors

Macromolecular Materials and Engineering, EarlyView.
This study examines the π–π stacking behavior of organic semiconductors on poly(chloro‐p‐xylylene) dielectric layers and elucidates its influence on molecular ordering and charge transport properties. Based on these observations, organic transistors with optimized electrical performance are fabricated, offering valuable insights for the development of ...
Taeyun Shim, Yu Jung Park, Jin Hee Lee, Ah‐Hyun Hong, Bright Walker, Sang Wan Cho, Dong‐Wook Park, Jung Hwa Seo   +7 more
wiley   +1 more source

Doping‐Free Polymer Nanoparticle Engineering of n‐Type Organic Mixed Ion–Electron Conductors for Enhancement‐Mode Organic Electrochemical Transistors

Macromolecular Rapid Communications, EarlyView.
We report a nanoparticle formulation strategy for the ladder polymer BBL that enables undoped enhancement‐mode OECTs. Controlled reprecipitation with DBSA yields stable nanoparticles, and spray‐coating forms dense, well‐connected films. The resulting devices exhibit strongly enhanced electrochemical response and transconductance, establishing a ...
Shunsuke Yamamoto, Katsumi Abe, Masaya Mitsuishi   +2 more
wiley   +1 more source

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia, Saeed Rasouli, Walter M. Weber, Daniele Nazzari   +3 more
wiley   +1 more source

Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs

Advanced Electronic Materials
Bilayer MoS2 exhibits bandgap narrowing under a vertical electric field due to inversion symmetry breaking, with the extent of reduction scaling proportionally with field strength. Leveraging this intrinsic property, this study investigates its impact on
Gyeong Min Seo, Jeong Wook Kim, Byoung Don Kong   +2 more
doaj   +1 more source