Results 31 to 40 of about 141,240 (252)

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Scientific Reports, 2017
Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature.
Wolfgang A. Vitale, Emanuele A. Casu, Arnab Biswas, Teodor Rosca, Cem Alper, Anna Krammer, Gia V. Luong, Qing-T. Zhao, Siegfried Mantl, Andreas Schüler, A. M. Ionescu   +10 more
doaj   +1 more source

High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates [PDF]

, 2000
The use of polycrystalline SiGe as the gate material for deep submicron CMOS has been investigated. A complete compatibility to standard CMOS processing is demonstrated when polycrystalline Si is substituted with SiGe (for Ge fractions below 0.5) to form
Ponomarev, Youri V., Salm, Cora, Schmitz, Jurriaan, Stolk, Peter A., Woerlee, Pierre H.   +4 more
core   +4 more sources

Structure-Dependent Subthreshold Swings for Double-gate MOSFETs

Journal of information and communication convergence engineering, 2011
In this paper, subthreshold swing characteristics have been presented for double-gate MOSFETs, using the analytical model based on series form of potential distribution. Subthreshold swing is very important factor for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec. The channel length L
Ji-Hyeong Han, Hak-Kee Jung, Choon-Shik Park   +2 more
openaire   +2 more sources

Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs [PDF]

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Energy efficiency in digital circuits is limited by the subthreshold swing (SS), which defines how abruptly a transistor switches between its ON and OFF-states. The SS is particularly important for circuits targeting minimum-energy computation which operate in the subthreshold region between the ON and OFF-states of the transistor.
Daniel S. Truesdell, Sheikh Z. Ahmed, Avik W. Ghosh, Benton H. Calhoun   +3 more
openaire   +2 more sources

Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

AIP Advances, 2014
Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope).
M. H. Lee, Y.-T. Wei, J.-C. Lin, C.-W. Chen, W.-H. Tu, M. Tang   +5 more
doaj   +1 more source

Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction

Holos, 2020
In this work, an III-V tunneling field-effect transistor (TFET) with source and channel heterojunctions is proposed and introduced. Proposed structure combine the high tunneling efficiency induced by heterojunction material and the high mobility of III-V
Masoud Sabaghi
doaj   +1 more source

Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP₂S₆/MoS₂ Van Der Waals Heterojunction

Nanomaterials, 2021
Due to the limitations of thermodynamics, the Boltzmann distribution of electrons hinders the further reduction of the power consumption of field-effect transistors.
Kun Yang, Shulong Wang, Tao Han, Hongxia Liu   +3 more
doaj   +1 more source

Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance

, 2010
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and steeper ...
Ganapathi, Kartik, Salahuddin, Sayeef, Yoon, Youngki   +2 more
core   +1 more source

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2020
We have investigated transient ${I} _{\mathrm{ d}}\,\,-\,\,{V} _{\mathrm{ g}}$ and ${I} _{\mathrm{ d}}\,\,-\,\,{V} _{\mathrm{ d}}$ characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering ...
C. Jin, T. Saraya, T. Hiramoto, M. Kobayashi   +3 more
semanticscholar   +1 more source

Impact of randomly distributed dopants on Ω-gate junctionless silicon nanowire transistors [PDF]

, 2018
This paper presents experimental and simulation analysis of an Ω-shaped silicon junctionless nanowire field-effect transistor (JL-NWT) with gate lengths of 150 nm and diameter of the Si channel of 8 nm.
Asenov, Asen, Carrillo-Nuñez, Hamilton, Georgiev, Vihar P., MacLaren, Donald A., Mirza, Muhamad M., Paul, Douglas J.   +5 more
core   +1 more source