Results 41 to 50 of about 141,240 (252)

Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs

IEEE Journal of the Electron Devices Society, 2018
In this paper, the influence of channel doping concentration and reverse boron penetration on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) FETs has been experimentally investigated and discussed. Effective carrier concentration (Neff)
Dong-Ru Hsieh, Yi-De Chan, Po-Yi Kuo, Tien-Sheng Chao   +3 more
doaj   +1 more source

Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

, 2010
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage.
Aydin, Bhuwalka, Bhuwalka, Bhuwalka, Boucart, Choi, Dhar, Dobrovolsky, Hansch, Hurkx, Lim, M. Jagadesh Kumar, Nagavarapu, Nirschl, Numata, Reddick, Sedlmaier, Shen, Sneh Saurabh, Takagi, Tehrani, Uemura, Wang, Wang, Zhang, Zhang   +25 more
core   +1 more source

Single-Branch Wide-Swing-Cascode Subthreshold GaN Monolithic Voltage Reference

Electronics, 2022
A voltage reference generator in GaN IC technology for smart power applications is described, analyzed, and simulated. A straightforward design procedure is also highlighted. Compared to previous low-power monolithic solutions, the proposed one is based on a single branch and on transistors operating in a subthreshold. The circuit provides a nearly 2.7
Cesare Bimbi, Salvatore Pennisi, Salvatore Privitera, Francesco Pulvirenti   +3 more
openaire   +2 more sources

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

Фізика і хімія твердого тіла, 2022
We analyze the electric potential and field, polarization and charge, and differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ...
E. A. Eliseev, A. N. Morozovska, L. P. Yurchenko, M. V. Strikha   +3 more
doaj   +1 more source

A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

, 2003
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an ...
Datta, Supriyo, Guo, Jing, Lundstrom, Mark   +2 more
core   +1 more source

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

, 2009
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics.
Appenzeller J., Appenzeller J., Berger C., Choi W. Y., Datta S., Datta S. S., Fiori G., Gunlycke D., Han M. Y., Javey A., Koswatta S. O., Koswatta S. O., Li X., Liang G. C., Lin Y.-M., Lu Y. R., Novoselov K. S., Ouyang Y., Poli S., Son Y. W., Taur Y., Wang X., Yan Q., Zhang Q., Zhang Y. B.   +24 more
core   +1 more source

A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET

Discover Applied Sciences
In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging
Neeraj Gupta, Rashmi Gupta, Rekha Yadav, Prashant Kumar, Lalit Rai   +4 more
doaj   +1 more source

Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]

, 2009
An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Estribeau, Magali, Goiffon, Vincent, Magnan, Pierre   +2 more
core   +1 more source

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

Advanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim, Sangjun Lee, Geon‐Hee Nam, Jieun Kwon, Junseo Kim, Syed Zahid Hassan, Dae Sung Chung   +6 more
wiley   +1 more source

High drain field impact ionization transistors as ideal switches

Nature Communications
Impact ionization effect has been demonstrated in transistors to enable sub-60 mV dec−1 subthreshold swing. However, traditionally, impact ionization in silicon devices requires a high operation voltage due to limited electrical field near the device ...
Baowei Yuan, Zhibo Chen, Yingxin Chen, Chengjie Tang, Weiao Chen, Zengguang Cheng, Chunsong Zhao, Zhaozhao Hou, Qiang Zhang, Weizhuo Gan, Jiacheng Gao, Jiale Wang, Jeffrey Xu, Guangxi Hu, Zhenhua Wu, Kun Luo, Mingyan Luo, Yuanbo Zhang, Zengxing Zhang, Shisheng Xiong, Chunxiao Cong, Wenzhong Bao, Shunli Ma, Jing Wan, Peng Zhou, Ye Lu   +25 more
doaj   +1 more source