Results 51 to 60 of about 141,240 (252)

Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation

Applied Sciences, 2020
Ternary complementary metal-oxide-semiconductor technology has been spotlighted as a promising system to replace conventional binary complementary metal-oxide-semiconductor (CMOS) with supply voltage (VDD) and power scaling limitations.
Kitae Lee, Sihyun Kim, Daewoong Kwon, Byung-Gook Park   +3 more
doaj   +1 more source

High efficiency switching using graphene based electron 'optics'

, 2011
The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling.
Ghosh, Avik, Sajjad, Redwan
core   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Complementary Symmetry Nanowire Logic Circuits: Experimental Demonstrations and in Silico Optimizations [PDF]

, 2008
Complementary symmetry (CS) Boolean logic utilizes both p- and n-type field-effect transistors (FETs) so that an input logic voltage signal will turn one or more p- or n-type FETs on, while turning an equal number of n- or p-type FETs off.
Heath, James R., Kurtin, Juanita N., Sheriff, Bonnie A., Wang, Dunwei   +3 more
core   +1 more source

Unraveling Quantitative Sensing Mechanism and Predictive Molecular Metrics for High‐Performance OFET Amine Sensors

Advanced Functional Materials, EarlyView.
This study introduces a novel chloro boron subphthalocyanine/polymer blend OFET sensor achieving 0.005 ppb limit of detection for ammonia at room temperature and high selectivity against similar amines. An original theoretical framework is proposed to describe the sensing mechanism, relating analyte molecular volume and Lewis basicity to sensor ...
Kavinraaj Ella Elangovan, Matthew P. Confer, Rui Zhang, Siqing Wang, Jeffrey S. Moore, Rohit Bhargava, Ying Diao   +6 more
wiley   +1 more source

First Demonstration of Ultra-Thin SiGe-Channel Junctionless Accumulation-Mode (JAM) Bulk FinFETs on Si Substrate with PN Junction-Isolation Scheme

IEEE Journal of the Electron Devices Society, 2014
A SiGe-channel junctionless-accumulation-mode (JAM) PMOS bulk FinFETs were successfully demonstrated on Si substrate with PN junction-isolation scheme for the first time.
Dong-Hyun Kim, Tae Kyun Kim, Young Gwang Yoon, Byeong-Woon Hwang, Yang-Kyu Choi, Byung Jin Cho, Seok-Hee Lee   +6 more
doaj   +1 more source

Nonvolatile ferroelectric field-effect transistors

Nature Communications, 2020
There is growing interest in non-traditional materials for logic applications. Here, the authors demonstrate a domain device architecture based on ferroelectric LiNbO3 crystals with gate voltage controlled transistor without subthreshold swing and source
Xiaojie Chai, Jun Jiang, Qinghua Zhang, Xu Hou, Fanqi Meng, Jie Wang, Lin Gu, David Wei Zhang, An Quan Jiang   +8 more
doaj   +1 more source

Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons

, 2010
A general solution for the electrostatic potential in an atomic-thin-body (ATB) field-effect transistor geometry is presented. The effective electrostatic scaling length, {\lambda}eff, is extracted from the analytical model, which cannot be approximated ...
Koester, Steven J., Koswatta, Siyuranga O., Lu, Yeqing, Xing, Huili Grace, Zhang, Qin   +4 more
core   +1 more source

A Three-dimensional simulation study of the performance of Carbon Nanotube Field Effect Transistors with doped reservoirs and realistic geometry [PDF]

, 2005
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions.
Fiori, G., Iannaccone, G., Klimeck, G.
core   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source