Results 61 to 70 of about 141,240 (252)
The Influence of Gate Scaling to Electrical Characteristics on n-MOS FinFET
MATEC Web of Conferences, 2017 This paper investigates effects from gate scaling in Tri-gate FinFET structure by simulation method, to avoid problems and improve a structure to be good prototype. The experiments used GTS framework for simulation.
Patchrasardtra Nuttapong, Pengchan Weera
doaj +1 more source
High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities [PDF]
, 2005 State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the
Appenzeller, Joerg +3 more
core +4 more sources
Stable P‐Type PbS Quantum Dot Ink for all‐Blade‐Coated Short‐Wavelength Infrared Photodiodes
Advanced Materials, EarlyView.Stabilization of p‐type PbS quantum dot ink is achieved through hydrogen bonding between fluorinated alcohols solvent and the MP ligand, allowing a six‐day shelf‐life. The solvent does not compromise pre‐deposited layers, enabling fully blade‐coated photodiodes in both n–p and p–n architectures, with enhanced detectivity and bandwidth compared to layer‐
Han Wang +5 more
wiley +1 more source
Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors
, 2017 The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply ...
Alam, Muhammad A. +10 more
core +1 more source
High‐κ Perovskite‐Like Ternary Niobium Oxide Dielectrics for 2D Electronics
Advanced Materials, EarlyView.High‐κ dielectrics are vital for scaled electronics. Here, a family of 2D high‐κ perovskite‐like ternary niobium oxides is synthesized via a molten salt‐assisted method. Their integration into FETs and logic gates reveals superior switching characteristics, providing a fresh material platform and new insights for the advancement of high‐performance 2D ...
Biao Zhang +10 more
wiley +1 more source
DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As
Holos, 2018 Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as on current (Ion), off-current (Ioff) and subthreshold ...
Behnam Dorostkar, Saeid Marjani
doaj +1 more source
Design of A Low Power Low Voltage CMOS Opamp
, 2010 In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on bias current. The
Baruah, Ratul Kr.
core +1 more source
Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications
Advanced Materials, EarlyView.This review surveys freestanding oxide membranes and covers fabrication and three pathways for studies and devices: strain‐free and strained membranes, and van der Waals‐integrated heterostructures. We show how coupled oxide responses map onto these routes and cross‐couple to expand behaviors.
Baowen Li +6 more
wiley +1 more source
Advanced Materials, EarlyView.This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid +6 more
wiley +1 more source
Single-crystal field-effect transistors based on copper phthalocyanine
, 2004 Copper phthalocyanine (Cu-Pc) single crystals were grown by physical vapor transport and field effect transistors (FETs) on the surface of these crystals were prepared. These FETs function as p-channel accumulation-mode devices. Charge carrier mobilities
Kloc, Christian +2 more
core +1 more source