Results 71 to 80 of about 141,240 (252)
Advanced Materials Interfaces, EarlyView.MOFs awaken graphene. MOF‐assisted ultrafast laser writing patterns porous laser‐induced graphene with CuO‐active nanodomains, creating an aptamer‐ready interface for small‐molecule capture. Coupled to an extended‐gate FET, the hybrid converts subtle biochemical binding into a clear electrical signal for resilient cortisol sensing in aqueous media ...
Co Dang Pham +2 more
wiley +1 more source
Transmission Engineering as a Route to Subthermal Switching
IEEE Journal of the Electron Devices Society, 2015 The physics of low subthreshold devices is interpreted in terms of a gate-dependent change in their mode-averaged transmission function, in addition to a capacitive shift in their overall mode spectrum.
Avik W. Ghosh
doaj +1 more source
A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs
, 2009 International audienceWe present an analytical model for the subthreshold characteristic of ultra-thin Independent Double-Gate (IDG) MOSFET working in the ballistic regime.
Autran, Jean-Luc +2 more
core +3 more sources
ACS Nano, 2019 With rapid development of integrated circuits, urgent requirements for a transistor with lower subthreshold swing (SS) and better contact properties are needed.
Xuefeng Wang +7 more
semanticscholar +1 more source
Decoding Trap States in Working 2D Perovskite Multi‐Functional Devices
Advanced Science, EarlyView.Illustration of the photoluminescence spectrum and energy‐level landscape governing trap‐mediated carrier dynamics in 2D F‐PEAI photodetectors. A novel approach capturing dynamic trap occupation and retrapping in devices under operating conditions, directly links defect energetics to carrier transport and enhanced photoresponse in multifunctional ...
Ioannis Leontis +8 more
wiley +1 more source
Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric
, 2009 We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages
Batlogg, B. +3 more
core +1 more source
Dual‐channel trench‐gate tunnel FET for improved ON‐current and subthreshold swing
Electronics Letters, 2019 In this Letter, a dual-channel trench-gate tunnel field-effect transistor (DCTG-TFET) is proposed and investigated. The gate of DCTG-TFET is placed vertically in a trench to create two channels which carry drain current in parallel.
T. Joshi, Y. Singh, B. Singh
semanticscholar +1 more source
Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors
Advanced Science, EarlyView.This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo +16 more
wiley +1 more source
IEEE AccessWhile gate workfunction fluctuation causes the threshold voltage shift of transistors, it leads to off- and on-state current variations with a given supply voltage and circuit performance degradation at room temperatures.
Kuo-Hsing Kao +6 more
doaj +1 more source
Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures [PDF]
, 2020 A key feature of two-dimensional materials is that the sign and concentration of their carriers can be externally controlled with techniques such as electrostatic gating.
Crommie, MF +10 more
core