Results 81 to 90 of about 141,240 (252)
Advanced Science, EarlyView.Here, we propose a single‐crystal PZT‐based piezo‐phototronic organic adaptive memory transistor (OAMT), achieving a record memory window capacity factor (γ) of 0.87 at a low SS of 200 mV/decade via efficient multi‐field control. The device achieves a high recognition accuracy ∼ 90% in neuromorphic simulations, demonstrates robust fault tolerance under
Chenhao Xu +8 more
wiley +1 more source
A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement [PDF]
مجله مدل سازی در مهندسیIn this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET.
Amin Vanak, Amir Amini
doaj +1 more source
Design Feasibility and Prospect of High-Performance Sub-50-nm-Channel Silicon-on-Insulator Single-Gate SOI MOSFET [PDF]
, 2008 This paper describes advanced results of our evaluation of the minimum channel length (Lmin). For the first time, we have added the constraint of subthreshold swing to that of threshold voltage, which has already been proposed.
Omura Yasuhisa +3 more
core +1 more source
Approaching the Trap-Free Limit in Organic Single Crystal Field-Effect Transistors
, 2014 Crystalline organic semiconductors, bonded by weak van der Waals forces, exhibit macroscopic properties that are very similar to those of inorganic semiconductors. While there are many open questions concerning the microscopic nature of charge transport,
Batlogg, Bertram +2 more
core +1 more source
Analytical relationship between subthreshold swing of thermionic and tunnelling currents
Electronics Letters, 2014 An analytical relationship between the subthreshold swing of the thermionic current and the tunnelling current is derived for double‐gate metal–oxide semiconductor field‐effect transistors (MOSFETs), based on the Wentzel‐Kramers‐Brillouin approximation.
Hiblot, G. +3 more
openaire +3 more sources
Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics
Advanced Science, EarlyView.This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren +8 more
wiley +1 more source
HeliyonHere, we investigate the effects of interface defects on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs) utilizing bottom, top, and dual gatings.
Mingu Kang +4 more
doaj +1 more source
IET Circuits, Devices and Systems, 2023 In this article, a new p+ pocket stacked gate oxide junctionless tunnelling field effect transistor (junction less tunnelling field effect transistor (JLTFET)) which has metal strip in gate oxide layer is proposed for analogue/RF circuit applications ...
Alireza Zirak
doaj +1 more source
Single crystal field-effect transistors based on an organic selenium-containing semiconductor
, 2004 We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices.
Kloc, Ch. +6 more
core +1 more source
Doping Profile Dependent Subthreshold Swing for Double Gate MOSFET
The Journal of the Korean Institute of Information and Communication Engineering, 2011 In this paper, the subthreshold swings for doping distribution in the channel have been analyzed in double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studying since it can lessen the short channel effects(SCEs) as next -generation nano device.
openaire +2 more sources