Results 111 to 120 of about 13,751 (195)

Unified Analytic Framework for Thickness‐Dependent Transport and Trap‐State Modulation in Ultrathin W:In2O3 Field‐Effect Transistors

Small Structures, Volume 7, Issue 2, February 2026.
We present a unified analytic framework linking subthreshold and above‐threshold conduction in oxide field‐effect transistors by decomposing the drain current into band transport, tail‐state percolation, and interface‐trap diffusion components. Parameter correlation and identifiability analyses enable robust extraction of physical metrics, yielding ...
Mochamad Januar, Zhao‐Feng Luo, Kou‐Chen Liu, Min‐Hung Lee   +3 more
wiley   +1 more source

Steep switching in trimmed-gate tunnel FET

AIP Advances, 2018
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda   +5 more
doaj   +1 more source

Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

IEEE Journal of the Electron Devices Society
The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing
Yuxin Liu, Qiang Liu, Jin Chen, Zhiqiang Mu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source

Analytical subthreshold swing model of junctionless elliptic gate-all-around (GAA) FET

AIMS Electronics and Electrical Engineering
An analytical subthreshold swing (SS) model has been presented to determine the SS of an elliptic junctionless gate-all-around field-effect transistor (GAA FET).
Hakkee Jung
doaj   +1 more source

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors

Advanced Electronic Materials
The pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs).
Fida Ali, Hyungyu Choi, Nasir Ali, Yasir Hassan, Tien Dat Ngo, Faisal Ahmed, Won‐Kyu Park, Zhipei Sun, Won Jong Yoo   +8 more
doaj   +1 more source

Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures

Nature Communications
Two-dimensional (2D) semiconductor-based vertical-transport field-effect transistors (VTFETs) – in which the current flows perpendicularly to the substrate surface direction – are in the drive to surmount the stringent downscaling constraints faced by ...
Qiyu Yang, Zheng-Dong Luo, Huali Duan, Xuetao Gan, Dawei Zhang, Yuewen Li, Dongxin Tan, Jan Seidel, Wenchao Chen, Yan Liu, Yue Hao, Genquan Han   +11 more
doaj   +1 more source

Native GaN/GaO_x Heterostructure Platform for Wafer-Scale Integration of High-Performance Complementary Transistors. [PDF]

Research (Wash D C)
Liang J, Liu C, Wei Y, Feng S, Sun Y, Ohno Y, Cheng HM, Sun DM.   +7 more
europepmc   +1 more source

Controlling Vertical Diffusion with an Al₂O₃ Back Interface Layer for Stable High-Performance InZnO TFTs. [PDF]

ACS Omega
Lee SH, Bak SY, Jang H, Kim M, Kim S, Yoon HJ, Ji H, Yi M.   +7 more
europepmc   +1 more source

Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide. [PDF]

Nat Commun
Liu M, Niu J, Yang G, Zhao R, Chen K, Lu W, Liao F, Wu Z, Jiang C, Geng D, Lu N, Nathan A, Li L, Liu M.   +13 more
europepmc   +1 more source

High performance and low leakage heterojunction 10 nm PZT NC-FinFET for low power application. [PDF]

Sci Rep
Tripathi SL, Prakash NN, Raj B, Hadiyoso S.   +3 more
europepmc   +1 more source