Part II: Investigation of Subthreshold Swing in Line Tunnel FETs Using Bias Stress Measurements
The role of trap-assisted tunneling (TAT) in the degradation of the subthreshold swing (SS) in n-type line tunnel field-effect transistors (TFETs) is investigated through the experiments and simulations.
VANDOOREN, A +21 more
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Comparisons between swing phase characteristics of race walkers and distance runners [PDF]
The aim of this study was to analyze swing characteristics during race walking and to compare these with distance running. The rules of race walking demand that no visible flight time should occur and the stance leg must be straightened from initial ...
Smith, LC, Hanley, B
core
In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured.
Heyu Liu +7 more
doaj +1 more source
A hybrid approach for suppressing ambipolar current in short-channel TFETs based on zigzag antimonene nanoribbons. [PDF]
Ghazi A, Yazdanpanah-Goharrizi A.
europepmc +1 more source
Dielectric and temperature-dependent optimization of an asymmetric gate-drain engineered core-shell dopingless nanotube tunnel FET for analog and RF performance. [PDF]
Kumar T R, Priya G L.
europepmc +1 more source
Ion-electron coupling-enabled mechanical ion transistor with ultralow subthreshold swing. [PDF]
Zhang G +9 more
europepmc +1 more source
Machine-Learning-Assisted Buried-Window FET Sensors for High-Reliability and High-Sensitivity Applications. [PDF]
Mehrad M, Zareiee M.
europepmc +1 more source
Ultrasensitive Hydrogen Detection Using GNRFET Sensor: Multimetric Optimization via Geometry, Temperature, and Oxygen Environment. [PDF]
Anvarifard MK, Ramezani Z.
europepmc +1 more source
Design and temperature assessment of analog/RF and linearity parameters on dual material gate junctionless FinFET at 7 nm technology node for nano scale applications. [PDF]
Kusuma R.
europepmc +1 more source
Design and simulation of a p-type dual interbridge treeFET with comprehensive DC, analog/RF, and linearity analysis for CMOS circuit applications. [PDF]
Mounika S, Nanda U.
europepmc +1 more source

