Results 121 to 130 of about 1,273 (146)

Role of the channel on the memory window of HfZrO_x ferroelectric field-effect transistors with p-type Si-doped InZnO_x channel. [PDF]

Sci Rep
Park H, Lim S, Lee S, Lee JW, Woo J.
europepmc   +1 more source

High-Performance Air-Stable Polymer Monolayer Transistors for Monolithic 3D CMOS logics. [PDF]

Adv Mater
Cheng M, Zhang Y, Wang J, Wang H, Xie Y, Zhang S, Liu C, Chu J, Zhang F, Yang Z, Zheng Z, Wu M, Li L, Li M.   +13 more
europepmc   +1 more source

Threshold-Voltage Modulation and N₂O Plasma Passivation for Enhanced Retention and Memory Window in Capacitorless 2T0C DRAM Oxide Thin-Film Transistors. [PDF]

Adv Sci (Weinh)
Yang C, Lee M, Han J, Nam S.
europepmc   +1 more source

Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS₂ Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments. [PDF]

Micromachines (Basel)
Tamersit K, Kouzou A, Rodriguez J, Abdelrahem M.   +3 more
europepmc   +1 more source

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Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

IEEE Electron Device Letters, 2007
We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate oxide and silicon-on-insulator layer thicknesses were scaled down to 2
Woo Young Choi, Byung-Gook Park, Tsu-Jae KING Liu   +2 more
exaly   +2 more sources

Subthreshold swing (SS) degradation as the origin of SS saturation in nanoscale cryogenic gate-all-around MOSFETs

Semiconductor Science and Technology
Abstract We investigate the physical mechanism linking subthreshold swing (SS) degradation and SS saturation in cryogenic n-type gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs). While previous studies attributed SS saturation to source-to-drain direct tunneling (SDDT), we clarify that SDDT alone does ...
Jaehyun Lee, Cristina Medina-Bailon, Oves Badami, Vihar P Georgiev   +3 more
openaire   +1 more source

Analysis of novel SGOI-TFET with record low subthreshold swing (SS) and high I<inf>on</inf>/I<inf>off</inf> ratio

2014 International Conference on Computing for Sustainable Global Development (INDIACom), 2014
Sweta Chander, Om Prakash Mahto, Vivek Chander, S. Baishya   +3 more
openaire   +1 more source

On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

Solid-State Electronics, 2020
G Ghibaudo, M Casse, S Martinie
exaly  

Power efficient transistors with low subthreshold swing using abrupt switching devices

Nano Energy, 2022
Jamal Aziz, Honggyun Kim, Tassawar Hussain   +2 more
exaly  

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

IEEE Electron Device Letters, 2020
Arnout Beckers, Farzan Jazaeri, Christian Enz   +2 more
exaly