Results 111 to 120 of about 361,658 (190)

High‐Mobility and Reliability Ultra‐Thin‐Channel Oxide Semiconductor Field‐Effect Transistors for Chip‐Interconnect‐Embedded Logic and Ferroelectric Memory

Advanced Materials, Volume 38, Issue 52, 16 September 2026.
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chun‐Kuei Chen, Sonu Hooda, Maheswari Sivan, Quanzhen Wan, Marco A. Villena, Bastien Beltrando, Zefeng Xu, Zihang Fang, Evgeny Zamburg, Juan B. Roldán, Luca Larcher, Gaurav Thareja, Aaron Voon‐Yew Thean   +12 more
wiley   +1 more source

Cation‐π Interaction‐Based Biointerface for Low‐Cost PD‐1 Detection Toward NSCLC Immunotherapy Monitoring

Advanced Materials Interfaces, Volume 13, Issue 17, 8 September 2026.
A cation‐π interaction‐based biointerface is engineered on a CNT‐FET for label‐free detection of PD‐1. PD‐1 monoclonal antibodies are orientedly immobilized via cation‐π interactions between PCz‐wrapped semiconducting single‐walled carbon nanotubes and the Fc region of the monoclonal antibody.
Chunmin Jia, Yimin Lei, Hong Xu, Xin Meng, Yuxiang Wei, Peixian Li, Xiaohua Ma, Yue Hao, Xiaohui Jia   +8 more
wiley   +1 more source

Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs

, 2014
An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained.
Xiang, Ping, Liu, Ran, Hu, Guangxi, Gu, Enyao, Wang, Lingli, Zhou, Xing   +5 more
core  

MoS2/Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
The synaptic behavior of MoS2/graphene floating‐gate structures is shown. A subthreshold slope of 25 mV/decade, a high current ON/OFF ratio of 1010$^{10}$ with sub‐nanowatt power consumption are achieved. The programming–erasing time is approximately 11 ns, a memory window of 5.9 V, and a projected 10‐year retention of 91%.
Md. Ibrahim Ahmed, Sharnali Islam
wiley   +1 more source

Carrier Mobility Enhancement in Two‐Dimensional Semiconductor

Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo, Yuehao Li, Xiangkai Liu, Chao Tan, Guohua Hu, Mingdong Dong, Zegao Wang   +6 more
wiley   +1 more source

The Evolution of Metal Halide Perovskite Transistors

Rare Metals, Volume 45, Issue 9, September 2026.
ABSTRACT Metal halide perovskites (MHPs) offer a revolutionary pathway for next‐generation field‐effect transistors (FETs) because of their exceptional carrier mobilities and cost‐effective processability. However, their transition to practical electronics is significantly challenged by intrinsic instability and imbalanced charge transport. This review
Jiangnan Xia, Xincan Qiu, Yu Liu, Tianchi Zhang, Hong Lian, Ping‐An Chen, Yizhi Zhu, Linlin Shi, Yuanyuan Hu   +8 more
wiley   +1 more source

Demonstration of SA TG Coplanar IGZO TFTs With Large Subthreshold Swing Using the Back-Gate Biasing Technique for AMOLED Applications

IEEE Journal of the Electron Devices Society
We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, exhibit superior characteristics as driving transistors in ...
Chae-Eun Oh, Ye-Lim Han, Dong-Ho Lee, Jin-Ha Hwang, Hwan-Seok Jeong, Myeong-Ho Kim, Kyoung-Seok Son, Sunhee Lee, Sang-Hun Song, Hyuck-In Kwon   +9 more
doaj   +1 more source

DIBL and subthreshold swing effect on carbon nanotube field effect transistor [PDF]

, 2015
Silicon based devices are getting problem with the limitation of channel length for fabrication of the miniature size. Short channel effects are creating such problem of the silicon devices. Thus CNT is a smart choice for replacement with the silicon.
Farhana, Soheli, Alam, A. H. M. Zahirul, Khan, Sheroz   +2 more
core  

Metal-ferroelectric-metal-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification

, 2010
This work reports the first complete experimental demonstration and investigation of subthreshold swing, SS, smaller than 60 mV/decade, at room temperature, due to internal voltage amplification in FETs with a Metal-Ferroelectric-Metal-Oxide gate stack ...
Jimenez D., Rusu A., Salvatore G. A., Ionescu A. M.   +3 more
core   +1 more source

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors

Advanced Electronic Materials
The pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs).
Fida Ali, Hyungyu Choi, Nasir Ali, Yasir Hassan, Tien Dat Ngo, Faisal Ahmed, Won‐Kyu Park, Zhipei Sun, Won Jong Yoo   +8 more
doaj   +1 more source