Remarkably High Effective Mobility of 301 cm2/V·s in 3 nm Ultra-Thin-Body SnO2 Transistor by UV Annealing. [PDF]
Nanomaterials (Basel)Shih AC, Zhan YH, Chin A.
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A First-Principles Study of Monolayer B<sub>4</sub>Cl<sub>4</sub>: Structural Stability, Anisotropic Electronic Properties, and Ballistic Transport Projections in Sub‑5 nm MOSFETs. [PDF]
ACS OmegaLi Z, Zhang Z, Liang S, Wang X, Han J.
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Controllable growth of MoO<sub>3</sub> dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics. [PDF]
Nat CommunLi X +7 more
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Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS<sub>2</sub> Field Effect Transistors. [PDF]
Adv MaterLiu L +10 more
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Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]
Micromachines (Basel)Huang J +5 more
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Engineering the ferroelectric polarization to optimize the GIDL and negative output conductance in negative capacitance FET. [PDF]
Sci RepThota VS, Moparthi S, Ghosh K.
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Ge/In<sub>0.53</sub>Ga<sub>0.47</sub>As heterojunction based doping less TFET for high sensitivity label free biosensing applications. [PDF]
Sci RepJaya M, Lorenzo R.
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Advancing 2D CMOS electronics with high-performance p-type transistors. [PDF]
Nat CommunJiang J +6 more
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