Results 101 to 110 of about 361,658 (190)

Laser‐assisted in situ fabrication of atomically thin Ga2O3 films for dielectric applications

FlexMat, EarlyView.
A confinement template‐assisted squeeze method, in conjunction with laser‐assisted in situ oxidation, facilitates fabrication of centimeter‐scale and atomically thin gallium oxide films from liquid gallium under room temperature conditions. This low‐damage approach avoids thermal degradation of sensitive materials and supports high‐performance field ...
Erzhuo Zhang, Guangyu Yang, Qiwei Sun, Jing Liu, Han Wang, Junran Zhang, Junlei Zhao, Lin Wang, Mengyuan Hua, Xiaolong Chen   +9 more
wiley   +1 more source

Steep switching in trimmed-gate tunnel FET

AIP Advances, 2018
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda   +5 more
doaj   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs [Elektronisk resurs]

, 2022
4 - 8 GHz low-noise amplifiers (LNAs) based on InP high electron mobility transistors (InP HEMTs) with different spacer thickness in the InAlAs-InGaAs heterostructure were fabricated and characterized at 5 K.
Bergsten, Johan,, Grahn, Jan,, Li, Junjie,, Wadefalk, Niklas,, Pourkabirian, Arsalan,   +4 more
core  

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Depletion‐Mode a‐IGZO TFTs AM‐OLED Pixel Circuit for VTH Shift Compensation and Capacitance Deviation Tolerance

Journal of the Society for Information Display, EarlyView.
A 6T‐2C AM‐OLED pixel circuit using a‐IGZO TFTs is proposed to compensate for driving‐TFT threshold‐voltage shifts, including depletion‐mode operation, while tolerating storage‐capacitance variation. Applying VDATA to the common plate of two series capacitors reduces coupling sensitivity, and a four‐phase sequence provides deterministic reset ...
Hyunwoo Kim, Sanghyun Park, Woongkyu Lee, Young‐Ha Hwang, Juntaek Oh, Hojin Lee   +5 more
wiley   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs

, 2007
An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included.
Guitart, Jaume Roig, El Hamid, Hamdy Abd, Flandre, Denis, Iniguez, Benjamin, Kilchytska, Valeria   +4 more
core   +1 more source

Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices

Small, EarlyView.
The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis, Filimon Zacharatos, Avraham Twitto, Michal Poplinger, Adi Levi, Amaia Pesquera, Amaia Zurutuza, Iakovos Kritikos, Stefania Skorda, Alexandros El Sachat, Yuri Mikhlin, Doron Naveh, Ioanna Zergioti   +12 more
wiley   +1 more source

Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

IEEE Journal of the Electron Devices Society
The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing
Yuxin Liu, Qiang Liu, Jin Chen, Zhiqiang Mu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source