Results 81 to 90 of about 361,658 (190)

Analytical expressions for subthreshold swing in FDSOI MOS structures

, 2018
International audienceNew analytical expressions for the subthreshold swing in FDSOI structures operated in both front gate and bottom gate modes are developed.
Ghibaudo, G., Pananakakis, G.
core   +1 more source

Flexible IGZO Field‐Effect Transistor Biosensor Platform for Mechanically Stable and Cortisol Detection

Advanced Electronic Materials, EarlyView.
A flexible indium–gallium–zinc oxide field‐effect transistor platform on polyimide is developed for electrostatic cortisol detection. Wafer‐scale fabricated devices exhibit uniform electrical characteristics and maintain stable operation under mechanical bending.
Ngoc Thanh Ho, Sina Jamali, Tuan‐Khoa Nguyen, Nam‐Trung Nguyen   +3 more
wiley   +1 more source

Long‐Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors

Advanced Electronic Materials
Carbon nanotube (CNT) thin film transistors (TFTs) have demonstrated great potential for application in highly sensitive biosensors and large‐area electronics.
Hai‐Yang Liu, Panpan Zhang, Xianmao Cao, Yang Zhang, Jianping He, Maguang Zhu, Mengmeng Xiao, Zhiyong Zhang   +7 more
doaj   +1 more source

Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications [PDF]

APL Electronic Devices
A record-low subthreshold swing (SS) of 9 mV/dec at 4 K has been achieved in planar bulk GaAs metal–oxide–semiconductor field-effect transistors (MOSFETs). The measured SS in our devices decreased with temperature, from 60 mV/dec at 300 K to 19 mV/dec at
L. B. Young, M. Hong, J. Kwo, M. J. Wang, H. W. Chang, K. M. Chen, B. Y. Chen, Y. T. Cheng, J. Liu, H. W. Wan, Y. H. G. Lin   +10 more
doaj   +1 more source

Metal Cation Chemistry and Amorphous Structure Governing Hydrogen Tolerance in Oxide Semiconductor Channels for 3D DRAM

Advanced Electronic Materials, EarlyView.
Amorphous In–Sn–Ga–O channels are presented as hydrogen‐tolerant oxide semiconductors for DRAM‐relevant thermal processes. Systematic comparisons of ternary oxides separate elemental and crystallinity effects under 400–600°C H2 annealing. Sn incorporation and amorphous structure suppress thickness loss and enable field‐effect transistors to retain ...
Seong‐Hwan Ryu, Sun Myung Lee, Kwang‐Hee Lee, Jee‐Eun Yang, Sangwook Kim, Jin‐Seong Park   +5 more
wiley   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Simulation of a new Pressure Swing Batch Distillation System [PDF]

, 2008
The operation and performance of a new pressure swing batch distillation configuration is investigated by rigorous simulation calculations. A maximum boiling point azeotrope is separated in a double column batch rectifier. We study the influence of the
Kopasz, A., Modla, Gábor, Lang, P.
core   +1 more source

Effects of ferroelectric composition, dielectric layer material, and channel length on the properties of MFIS NCFETs

Gongneng cailiao yu qijian xuebao
This study presents a comprehensive investigation on the properties of negative capacitance field-effect transistors (NCFETs) based on the metal-ferroelectric-insulator-semiconductor (MFIS) structure with HfxZr1−xO2 (HZO, 0.5≤x≤0.9) thin film.
Guannan CHEN, Yong SHAO, Qiqing LI, Minmin ZHU   +3 more
doaj   +1 more source

Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors531

, 2018
The subthreshold behavior of floating-gate MOSFETs connected with ferroelectric capacitors (FeCs) was investigated experimentally and theoretically. We found that the subthreshold swing (SS) decreases with decreasing ferroelectric capacitance (i.e., with
Han, Qinghua, Schroeder, Uwe, Aleksa, Paulus, Schubert, Juergen, Tromm, Thomas C. U., Mantl, Siegfried, Zhao, Qing-Tai, Hoffmann, Michael   +7 more
core   +1 more source

Ultralow‐Power Floating‐Gate InGaZnO Content‐Addressable Memory for Wearable Electrocardiogram Anomaly Detection

Advanced Intelligent Systems, EarlyView.
This study introduces a subthreshold in‐memory anomaly detection architecture for wearable ECG monitoring using floating‐gate IGZO content‐addressable memories on a flexible substrate. Area‐engineered coupling provides a high subthreshold slope, while subthreshold operation realizes intrinsic exponential distance evaluation and linear voltage sensing ...
Hyung‐Jun Noh, Sunyeol Bae, Yumin Yun, Junhyeong Park, Soo‐Yeon Lee   +4 more
wiley   +1 more source