Results 81 to 90 of about 1,298 (156)

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source

Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

IEEE Journal of the Electron Devices Society
The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing
Yuxin Liu, Qiang Liu, Jin Chen, Zhiqiang Mu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source

Oxygen Vacancy Passivation by Compensation Technique to Address the Conflict Between Mobility and Threshold Voltage of Heterojunction Oxide Transistors

Small Structures, Volume 7, Issue 8, August 2026.
This work presents a facile surface passivation strategy for heterojunction transistors. Using an NH4Cl solution, it resolves the threshold voltage and mobility conflict in IZO/ZnO heterojunction transistors. High field‐effect mobility is preserved by passivating surface oxygen vacancies on ZnO, where OH groups form stable Zn–OH species at room ...
Qinyuan Wang, Siyuan Hu, Jingye Xie, Junchen Dong, Zheng Zhou, Jinlong Lin, Dedong Han   +6 more
wiley   +1 more source

Establishing a Specialty Bipolar Clinic: The National Network of Depression Centers Consensus Recommendations

Bipolar Disorders, Volume 28, Issue 5, August 2026.
ABSTRACT Objective To provide expert recommendations for the development of a specialty bipolar clinic that promotes best clinical practices for the delivery of safe and effective care. Methods Members of the National Network of Depression Centers (NNDC) Bipolar Clinics Work Group met in a series of 1‐h monthly video calls over 18 months to discuss all
Christopher D. Schneck, Jorge R. C. Almeida, David J. Bond, Katherine E. Burdick, Mark A. Frye, Fernando S. Goes, Rebekah S. Huber, Rodrigo Machado‐Vieira, Pamela Mahon, Melvin G. McInnis, John Nurnberger, Dost Ongur, Michael J. Ostacher, Sagar V. Parikh, Kristin S. Raj, Matteo Respino, Barbara W. Schweizer, Jair C. Soares, Sarah H. Sperry, Aimee E. Sullivan, Trisha Suppes, Marin Veldic, Peter P. Zandi, J. Raymond DePaulo   +23 more
wiley   +1 more source

Demonstration of SA TG Coplanar IGZO TFTs With Large Subthreshold Swing Using the Back-Gate Biasing Technique for AMOLED Applications

IEEE Journal of the Electron Devices Society
We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, exhibit superior characteristics as driving transistors in ...
Chae-Eun Oh, Ye-Lim Han, Dong-Ho Lee, Jin-Ha Hwang, Hwan-Seok Jeong, Myeong-Ho Kim, Kyoung-Seok Son, Sunhee Lee, Sang-Hun Song, Hyuck-In Kwon   +9 more
doaj   +1 more source

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors

Advanced Electronic Materials
The pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs).
Fida Ali, Hyungyu Choi, Nasir Ali, Yasir Hassan, Tien Dat Ngo, Faisal Ahmed, Won‐Kyu Park, Zhipei Sun, Won Jong Yoo   +8 more
doaj   +1 more source

Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

Journal of Physics Communications
In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured.
Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin   +7 more
doaj   +1 more source

Ultrasensitive Hydrogen Detection Using GNRFET Sensor: Multimetric Optimization via Geometry, Temperature, and Oxygen Environment. [PDF]

Micromachines (Basel)
Anvarifard MK, Ramezani Z.
europepmc   +1 more source

Machine-Learning-Assisted Buried-Window FET Sensors for High-Reliability and High-Sensitivity Applications. [PDF]

Sensors (Basel)
Mehrad M, Zareiee M.
europepmc   +1 more source

Design and simulation of a p-type dual interbridge treeFET with comprehensive DC, analog/RF, and linearity analysis for CMOS circuit applications. [PDF]

Sci Rep
Mounika S, Nanda U.
europepmc   +1 more source