Results 61 to 70 of about 1,273 (146)

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications [PDF]

APL Electronic Devices
A record-low subthreshold swing (SS) of 9 mV/dec at 4 K has been achieved in planar bulk GaAs metal–oxide–semiconductor field-effect transistors (MOSFETs). The measured SS in our devices decreased with temperature, from 60 mV/dec at 300 K to 19 mV/dec at
L. B. Young, M. Hong, J. Kwo, M. J. Wang, H. W. Chang, K. M. Chen, B. Y. Chen, Y. T. Cheng, J. Liu, H. W. Wan, Y. H. G. Lin   +10 more
doaj   +1 more source

Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices

Small, EarlyView.
The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis, Filimon Zacharatos, Avraham Twitto, Michal Poplinger, Adi Levi, Amaia Pesquera, Amaia Zurutuza, Iakovos Kritikos, Stefania Skorda, Alexandros El Sachat, Yuri Mikhlin, Doron Naveh, Ioanna Zergioti   +12 more
wiley   +1 more source

High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing

Nanoscale Research Letters, 2019
This paper investigates the impacts of post metal annealing (PMA) and post deposition annealing (PDA) on the electrical performance of Ge p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ZrO2 dielectric.
Huan Liu, Genquan Han, Yan Liu, Yue Hao
doaj   +1 more source

Unified Steep‐Slope Switching and Non‐Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor

Small, EarlyView.
We present a van der Waals FeNC‐FET that simultaneously achieves sub‐60 mV/dec steep switching and non‐volatile memory within a single transistor. A CIPS/h‐BN/α‐In2Se3 bi‐ferroelectric gate stack enables a stabilized negative‐capacitance state in FE1 while maintaining the bistable polarization of FE2.
Sangmin Lee, Stanislav Sin, Cheolhwa Jang, Seongkweon Kang, Saeroonter Oh, Sungjoo Lee   +5 more
wiley   +1 more source

Long‐Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors

Advanced Electronic Materials
Carbon nanotube (CNT) thin film transistors (TFTs) have demonstrated great potential for application in highly sensitive biosensors and large‐area electronics.
Hai‐Yang Liu, Panpan Zhang, Xianmao Cao, Yang Zhang, Jianping He, Maguang Zhu, Mengmeng Xiao, Zhiyong Zhang   +7 more
doaj   +1 more source

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

Advanced Functional Materials, Volume 36, Issue 45, 5 June 2026.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee, Sumin Hong, Minho Park, Seongju Kim, Sanghoon Baek, Seonguk Yang, Chang‐Soo Lee, Sang‐Hoon Bae, Joonki Suh, Yongwoo Lee, Haksoon Jung, Jimin Kwon   +11 more
wiley   +1 more source

Hydrogen‐State‐Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
We introduce a three‐step hydrogen annealing method for oxide semiconductor devices that modulates hydrogen incorporation and its passivation behavior. Consequently, interface traps are suppressed, whereas the mobility, reliability, and data retention of the IGO‐based 2T0C DRAM are simultaneously improved.
Jun‐Yeoub Lee, Taewon Hwang, Su‐Hwan Choi, Hye‐Jin Oh, Chang‐Kyun Park, Jin‐Seong Park   +5 more
wiley   +1 more source

Solution‐Processed Tunable Spectral Response Photodetectors Enabled by Acidochromic Polymers

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
Tunable spectral response photodetectors have been fabricated by using acidochromic polymers in photodiode and phototransistor geometries with organic/inorganic semiconductor heterojunctions. The spectral response of the photodetector has been tuned from the visible to the NIR region by using vapor‐phase trifluoroacetic acid (TFA) in a reversible way ...
Pijush Kanti Aich, Krzysztof Kotewicz, Utkarsh Pandey, Sobhan Hazra, Ergang Wang, Bhola Nath Pal   +5 more
wiley   +1 more source

Charge Transport in Thin‐Film Transistors Based on Liquid‐Crystalline Phthalocyanines

ChemNanoMat, Volume 12, Issue 6, June 2026.
These results highlight how mesomorphic order, metal coordination, and environmental conditions collectively govern charge transport in liquid‐crystalline phthalocyanines, offering design guidelines for their use as self‐assembled semiconductors in organic electronics.
Lindiomar Borges de Avila Junior, Zuchong Yang, Ilknur Hatice Eryilmaz, Lilian Skokan, Leonardo Furini, Andreas Ruediger, Harald Bock, Ivan H. Bechtold, Emanuele Orgiu   +8 more
wiley   +1 more source