Results 61 to 70 of about 361,658 (190)

A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction

, 2016
In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average subthreshold swing (SS). Different from conventional TFETs, HS-TFETs owns a stacked source configuration consisting of an upper source layer with a relatively ...
Wu, Chunlei, Zhao, Yang, Wang, Jiaxin, Wang, Yangyuan, Huang, Qianqian, Huang, Ru   +5 more
core   +1 more source

FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design

Discover Nano
In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel.
Jyi-Tsong Lin, Wei-Heng Tai
doaj   +1 more source

Analog Synaptic Plasticity in 2D Layered Material Iontronic Memtransistors for Brain‐Inspired Computing

Advanced Science, EarlyView.
In this work, we demonstrated a robust 2D MoS2 based iontronic memtransistor of planar architecture operated under the influence of an electrical double layer with versatile performance and applications, including pinched hysteresis nature of transfer curve, analogue channel conductance tuning, low‐voltage operation, logic‐gate operation, classical ...
Puranjay Saha, Saptarshi Bej, Bikas C. Das   +2 more
wiley   +1 more source

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2020
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
doaj   +1 more source

Wafer‐Scale 3D Integration for High‐Density Multi‐Valued Neuromorphic Logic

Advanced Science, EarlyView.
Wafer‐scale 3D vertically integrated multi‐valued logic (MVL) circuits are realized by monolithically integrating a Te/IGZO heterojunction FET with an engineered Te pull‐up FET. Heterointerface‐mediated transport and optimized current matching enable stable ternary operation, while vertical stacking reduces circuit footprint and interconnect complexity,
Chang‐Hyeon Kim, Min Seok Kim, Joong Bum Rhim, Tae In Kim, Hyuck‐In Kwon, Ick‐Joon Park   +5 more
wiley   +1 more source

Deposition Rate‐Controlled Functional Evolution of p‐Type Selenium‐Alloyed Tellurium–Tellurium Oxide Films for Thin‐Film Transistors

Advanced Science, EarlyView.
This study investigates the effects of thermal deposition rate on next‐generation p‐type amorphous oxide semiconductor SeTe–TeOx films. Deposition rate governs the chemical states, microstructure, and electrical characteristics of the films, resulting in tunable device properties.
Seongmo Kang, Jeong‐Min Seo, Hyungyu Choi, Yunseo Song, Tae Woong Yoon, Tae Woong Han, Hoseong Shin, Jiyun Lee, Boseok Kang   +8 more
wiley   +1 more source

Characterization and capacitive modeling of target concentration-dependent subthreshold swing in silicon nanoribbon biosensors

, 2014
The effect of streptavidin concentration as a target molecule on the subthreshold swing (SS) of biotin-functionalized silicon nanoribbon sensors was investigated for a configuration of field effect transistors.
Lee, Won Hee, Uhm, Mihee, Kim, Kyung Rok, Lee, Jin-Moo, Choi, Sung-Jin, Jeong, Yong-Joo, Kim, Dong Myong, Lee, Jieun, Kim, Dae Hwan   +8 more
core   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Swing-up control of inverted pendulum systems. [PDF]

, 1996
In Part I a technique for the swing-up control of single inverted pendulum system is presented. The requirement is to swing-up a carriage mounted pendulum system from its natural pendent position to its inverted position.
Shao, Jindi, Bradshaw, Alan
core   +4 more sources

Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current

IEEE Journal of the Electron Devices Society, 2020
In this paper, an N-type silicon line tunneling TFET (LT-TFET) with an ultra-shallow N+ pocket was proposed. The pocket was formed by using the germanium preamorphization implantation (Ge PAI), arsenic ultra-low energy implantation and spike annealing ...
Weijun Cheng, Renrong Liang, Gaobo Xu, Guofang Yu, Shuqin Zhang, Huaxiang Yin, Chao Zhao, Tian-Ling Ren, Jun Xu   +8 more
doaj   +1 more source