Results 51 to 60 of about 1,273 (146)

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2020
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
doaj   +1 more source

Tandem Neural Network Rapidly Solves Multivalued Inverse Problems: Application to Oxide‐Semiconductor Characterization

Advanced Intelligent Systems, EarlyView.
A tandem neural network directly solves the multivalued inverse problem of extracting semiconductor parameters from transistor measurements. Trained on only 1000 simulations, the network infers six material parameters (e.g., defect states, carrier concentration, mobility) in under 1 ms, demonstrating a broadly applicable framework for semiconductor ...
Masatoshi Kimura, Keisuke Ide, Kuan‐Ju Zhou, Atsushi Shimizu, Takayoshi Katase, Hidenori Hiramatsu, Kei Terayama, Hideo Hosono, Toshio Kamiya   +8 more
wiley   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current

IEEE Journal of the Electron Devices Society, 2020
In this paper, an N-type silicon line tunneling TFET (LT-TFET) with an ultra-shallow N+ pocket was proposed. The pocket was formed by using the germanium preamorphization implantation (Ge PAI), arsenic ultra-low energy implantation and spike annealing ...
Weijun Cheng, Renrong Liang, Gaobo Xu, Guofang Yu, Shuqin Zhang, Huaxiang Yin, Chao Zhao, Tian-Ling Ren, Jun Xu   +8 more
doaj   +1 more source

Material design strategies for flexible n‐type polymer semiconductors

FlexMat, EarlyView.
This Perspective surveys recent progress in flexible n‐type polymer semiconductors, emphasizing the interplay between molecular design and microstructure control. It outlines strategies including backbone and side‐chain engineering, multilevel microstructure optimization, to maintain charge‐transport pathways under mechanical deformation.
Xiao‐Yan Zhang, Yang‐Yang Zhou, Jie‐Yu Wang, Jian Pei, Ze‐Fan Yao   +4 more
wiley   +1 more source

Overcoming contact issues in bottom‐contact, short‐channel organic transistors with van der Waals conformal contacts

FlexMat, EarlyView.
A new conformal contact transfer strategy is developed to enhance the contact interface quality between organic semiconductors and metal electrodes in bottom‐contact, short channel organic field‐effect transistors. By utilizing interfacial water permeation and surface functionalization, the method achieves a van der Waals conformal contact interface ...
Yuan Tan, Wei Deng, Yongji Wang, Haoyu Jiang, Xinghan Meng, Xiujuan Zhang, Xiaohong Zhang, Jiansheng Jie   +7 more
wiley   +1 more source

Laser‐assisted in situ fabrication of atomically thin Ga2O3 films for dielectric applications

FlexMat, EarlyView.
A confinement template‐assisted squeeze method, in conjunction with laser‐assisted in situ oxidation, facilitates fabrication of centimeter‐scale and atomically thin gallium oxide films from liquid gallium under room temperature conditions. This low‐damage approach avoids thermal degradation of sensitive materials and supports high‐performance field ...
Erzhuo Zhang, Guangyu Yang, Qiwei Sun, Jing Liu, Han Wang, Junran Zhang, Junlei Zhao, Lin Wang, Mengyuan Hua, Xiaolong Chen   +9 more
wiley   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2

Nanoscale Research Letters, 2019
Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−x Zr x O2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of
Yue Peng, Yan Liu, Genquan Han, Jincheng Zhang, Yue Hao   +4 more
doaj   +1 more source

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source