Results 41 to 50 of about 1,298 (156)

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

Nanomaterials, 2023
Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2).
Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng   +14 more
doaj   +1 more source

MOCVD‐Grown MoS2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

Advanced Materials, EarlyView.
We reveal the electronic origin of hidden interfacial doping in monolayer MoS2 grown by MOCVD, identifying sulfate related and water like species as intrinsic donors. Through dry interface engineering approach, we demonstrate MOCVD‐grown single‐crystal MoS2 wafers as a transfer‐free platform for the reliable evaluation of intrinsic gate stacks and ...
Shuhong Li, Juiteng Chang, Keisuke Atsumi, Kosei Matsumoto, Itsuki Tanaka, Tomonori Nishimura, Kaito Kanahashi, Takahiro Nagata, Jun Nara, Yoshiki Sakuma, Emi Kano, Nobuyuki Ikarashi, Kosuke Nagashio   +12 more
wiley   +1 more source

Subthreshold-swing physics of tunnel field-effect transistors

AIP Advances, 2014
Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS) below 60 mV/decade.
Wei Cao, Deblina Sarkar, Yasin Khatami, Jiahao Kang, Kaustav Banerjee   +4 more
doaj   +1 more source

The Effect of Fin Structure in 5 nm FinFET Technology

Journal of Microelectronic Manufacturing, 2019
In 5 nm technology node, FinFET device performance is sensitive to the dimension of the device structure such as the fin profile. In this work, we simulate the influence of fin height and fin width to an n-type FinFET. We have found that an optimized fin
Enming Shang, Yu Ding, Wenqiao Chen, Shaojian Hu, Shoumian Chen   +4 more
doaj   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source

MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass

IEEE Journal of the Electron Devices Society, 2021
We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg0.03Zn0.97O (MZO) semiconductor served as the channel layer and ferroelectric Ni0.02Mg0.15Zn0.83O (NMZO) serves in the
Fangzhou Yu, Wen-Chiang Hong, Guangyuan Li, Yuxuan Li, Ming Lu, Yicheng Lu   +5 more
doaj   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
wiley   +1 more source

Cation‐π Interaction‐Based Biointerface for Low‐Cost PD‐1 Detection Toward NSCLC Immunotherapy Monitoring

Advanced Materials Interfaces, EarlyView.
A cation‐π interaction‐based biointerface is engineered on a CNT‐FET for label‐free detection of PD‐1. PD‐1 monoclonal antibodies are orientedly immobilized via cation‐π interactions between PCz‐wrapped semiconducting single‐walled carbon nanotubes and the Fc region of the monoclonal antibody.
Chunmin Jia, Yimin Lei, Hong Xu, Xin Meng, Yuxiang Wei, Peixian Li, Xiaohua Ma, Yue Hao, Xiaohui Jia   +8 more
wiley   +1 more source

FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design

Discover Nano
In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel.
Jyi-Tsong Lin, Wei-Heng Tai
doaj   +1 more source