Results 31 to 40 of about 361,658 (190)

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Membranes, 2021
Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 ...
Honglong Ning, Xuan Zeng, Hongke Zhang, Xu Zhang, Rihui Yao, Xianzhe Liu, Dongxiang Luo, Zhuohui Xu, Qiannan Ye, Junbiao Peng   +9 more
doaj   +1 more source

Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

Applied Sciences, 2020
The hump behavior of gate-normal nanowire tunnel field-effect transistors (NWTFETs) is investigated by using a three-dimensional technology computer-aided design (TCAD) simulation.
Min Woo Kang, Woo Young Choi
doaj   +1 more source

Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO₃ Capacitor

Membranes, 2021
By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (
Tsung-Kuei Kang, Yu-Yu Lin, Han-Wen Liu, Che-Li Lin, Po-Jui Chang, Ming-Cheng Kao, Hone-Zern Chen   +6 more
doaj   +1 more source

Variation Resilient Adaptive Controller for Subthreshold Circuits

, 2009
Subthreshold logic is showing good promise as a viable ultra-low-power circuit design technique for power-limited applications. For this design technique to gain widespread adoption, one of the most pressing concerns is how to improve the robustness of ...
B. Mishra, Zwolinski, Mark, B.M. Al-Hashimi, Mishra, B, M. Zwolinski, Al-Hashimi, Bashir   +5 more
core   +1 more source

The Impact of Tunneling on the Subthreshold Swing in Sub-20 nm Asymmetric Double Gate MOSFETs [PDF]

, 2016
This paper analyzes the subthreshold swing in asymmetric double gate MOSFETs with sub-20 nm channel lengths. The analysis of the carrier transport in the subthreshold region of these nano scaled MOSFET includes tunneling as an important additional ...
Jung, Hak Kee, Sima Dimitrijev, Dimitrijev, Sima, Dimitrijev, S, Hak Kee Jung, Jung, HK   +5 more
core   +1 more source

DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

Holos, 2018
Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as  on current (Ion), off-current (Ioff) and subthreshold ...
Behnam Dorostkar, Saeid Marjani
doaj   +1 more source

The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor

IEEE Access, 2021
In this work, the effect of gate voltage sampling interval ( $\Delta \text{V}_{\mathrm {gs}}$ ) and various difference approximation methods on extracting the value of subthreshold swing (SS) have been investigated in detail for InGaZnO thin film ...
Chang Liu, Yiming Liu, Song Wei, Yi Zhao
doaj   +1 more source

Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor [PDF]

, 2017
We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors by comparing the subthreshold swing and the conductance in the negative differential resistance region.
M. Hellenbrand, Lind, Erik,, L.-E. Wernersson, Memisevic, Elvedin, Hellenbrand, Markus, Wernersson, Lars-Erik, E. Lind, Svensson, Johannes, Lund University., J. Svensson, Svensson, Johannes,, Wernersson, Lars-Erik,, Lind, Erik, Hellenbrand, Markus,, E. Memisevic   +14 more
core   +1 more source

Temperature Characteristics of Nano-Dimensional FinFET with P Type GaP Semiconductor Channel Based on ION/IOFF and Subthreshold Swing (SS)

AIUB Journal of Science and Engineering (AJSE)
This study discusses the effects of working temperature on the GaP-FinFET structure. Using the Multi-Gate Field Effect Transistors (MuGFET) simulation tool, the properties of FinFET have been generated over a temperature range of T=0 °C to T=125 °C.
Yasir Hashim, Safwan Mawlood Hussein
openaire   +1 more source

A New Figure of Merit, ${\Delta V_{\text {DIBLSS}} /(I_{\rm {d},{\mathrm{ sat}}} /I_{\rm {sd},{\mathrm{ leak}}} )}$ , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device

IEEE Journal of the Electron Devices Society, 2017
This paper aims to investigate the device parameters, including drain-induced barrier lowering (DIBL), subthreshold swing (SS), and saturation drive current, Id,sat, of bulk-Si n-channel FinFET devices (bulk n-FinFETs). The impact of lightly doped drain (
Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Steven Hsu, Chun Mao Chiou, Ted Wang, Chih-Wei Yang, Chien-Ting Lin, I-Chang Wang, Ming-Chih Chen, Andy Lai, Pei-Wen Wang, Chia-Jung Hsu, Wen-Yuan Pang, Chin-Hao Kuo, Osbert Cheng, Chih-Yi Wang   +16 more
doaj   +1 more source