Results 11 to 20 of about 361,658 (190)
Subthreshold-swing physics of tunnel field-effect transistors
AIP Advances, 2014 Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS) below 60 mV/decade.
Wei Cao +4 more
doaj +2 more sources
Resonant spike propagation in coupled neurons with subthreshold activity [PDF]
, 2008 Màster en Biofísica, curs 2006-2007Chemical coupling between neurons is only active when the presynaptic neuron is firing, and thus it does not allow for the propagation of subthreshold activity.
Sancristóbal Alonso, Belén
core +6 more sources
Deciphering the Crystallinity-Dependent Sensitivity of Charge Injection in n-Channel Organic Transistors: Reliable Characterization and Optimized Performance. [PDF]
Adv Sci (Weinh)Precise characterization of n‐type organic semiconductors necessitates decoupling interfacial constraints from intrinsic charge transport. This work reveals that disordered polymers are particularly vulnerable to contact‐limited bottlenecks compared to their crystalline counterparts.
Boukhili W +15 more
europepmc +2 more sources
Subthreshold FIR Filter Architecture for Ultra Low Power Applications [PDF]
, 2008 Subthreshold design has been proposed as an effective technique for designing signal processing circuits needed in wireless sensor nodes powered by sources with limited energy.
M. Al-Hashimi, Bashir, Mishra, Biswajit
core +2 more sources
EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)
International Islamic University Malaysia Engineering Journal, 2020 Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim +2 more
doaj +1 more source
Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 Energy efficiency in digital circuits is limited by the subthreshold swing (SS), which defines how abruptly a transistor switches between its ON and OFF-states.
Daniel S. Truesdell +3 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2023 We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation ${T}\,\,=$ 300 K – 4.5 K. Subthreshold swing (SS)-plateau at 125 K – 50 K in combination with SS-linearity at ${T}\,\,=$ 300 K &
Yo-Ming Chang +4 more
doaj +1 more source
Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor [PDF]
Журнал нано- та електронної фізики, 2016 The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN ...
Fatima Zohra Rahou +2 more
doaj +1 more source
IEEE Access, 2020 A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS ...
Jang Woo Lee, Woo Young Choi
doaj +1 more source
Nature Communications, 2020 Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed.
Xiuyan Li, Akira Toriumi
doaj +1 more source