Results 21 to 30 of about 1,273 (146)

Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel [PDF]

Journal of Electrical and Computer Engineering Innovations, 2018
Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated.Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel ...
M. Karbalaei, D. Dideban, N. Moezi
doaj   +1 more source

Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability

IEEE Journal of the Electron Devices Society, 2022
In this article, sub-10 nm top width nanowire In0.53Ga0.47As gate-all-around (GAA) MOSFETs with improved subthreshold characteristics and reliability are demonstrated.
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Jing-Yuan Wu, Si-Meng Chen, Nhan-Ai Tran, Heng-Tung Hsu, Edward Yi Chang   +7 more
doaj   +1 more source

Polarization Gradient Effect of Negative Capacitance LTFET

Micromachines, 2022
In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO2) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD.
Hao Zhang, Shupeng Chen, Hongxia Liu, Shulong Wang, Dong Wang, Xiaoyang Fan, Chen Chong, Chenyu Yin, Tianzhi Gao   +8 more
doaj   +1 more source

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Membranes, 2021
Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 ...
Honglong Ning, Xuan Zeng, Hongke Zhang, Xu Zhang, Rihui Yao, Xianzhe Liu, Dongxiang Luo, Zhuohui Xu, Qiannan Ye, Junbiao Peng   +9 more
doaj   +1 more source

Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO₃ Capacitor

Membranes, 2021
By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (
Tsung-Kuei Kang, Yu-Yu Lin, Han-Wen Liu, Che-Li Lin, Po-Jui Chang, Ming-Cheng Kao, Hone-Zern Chen   +6 more
doaj   +1 more source

Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

Applied Sciences, 2020
The hump behavior of gate-normal nanowire tunnel field-effect transistors (NWTFETs) is investigated by using a three-dimensional technology computer-aided design (TCAD) simulation.
Min Woo Kang, Woo Young Choi
doaj   +1 more source

The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor

IEEE Access, 2021
In this work, the effect of gate voltage sampling interval ( $\Delta \text{V}_{\mathrm {gs}}$ ) and various difference approximation methods on extracting the value of subthreshold swing (SS) have been investigated in detail for InGaZnO thin film ...
Chang Liu, Yiming Liu, Song Wei, Yi Zhao
doaj   +1 more source

DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

Holos, 2018
Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as  on current (Ion), off-current (Ioff) and subthreshold ...
Behnam Dorostkar, Saeid Marjani
doaj   +1 more source

A New Figure of Merit, ${\Delta V_{\text {DIBLSS}} /(I_{\rm {d},{\mathrm{ sat}}} /I_{\rm {sd},{\mathrm{ leak}}} )}$ , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device

IEEE Journal of the Electron Devices Society, 2017
This paper aims to investigate the device parameters, including drain-induced barrier lowering (DIBL), subthreshold swing (SS), and saturation drive current, Id,sat, of bulk-Si n-channel FinFET devices (bulk n-FinFETs). The impact of lightly doped drain (
Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Steven Hsu, Chun Mao Chiou, Ted Wang, Chih-Wei Yang, Chien-Ting Lin, I-Chang Wang, Ming-Chih Chen, Andy Lai, Pei-Wen Wang, Chia-Jung Hsu, Wen-Yuan Pang, Chin-Hao Kuo, Osbert Cheng, Chih-Yi Wang   +16 more
doaj   +1 more source

Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †

Sensors, 2018
InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects.
Pin-Guang Chen, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou, Min-Hung Lee   +5 more
doaj   +1 more source