Results 21 to 30 of about 361,658 (190)

Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

IEEE Journal of the Electron Devices Society, 2018
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept.
Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee   +14 more
doaj   +1 more source

Nano-Dimensional Properties of Si-FinFET Transistor Based on ION/IOFF Ratio and Subthreshold Swing (SS)

Journal of Nanoscience and Technology, 2018
This paper presents design the optimal channel dimensions for Silicon Fin Feld Effect Transistor (Si-FinFET) for improvement electrical characteristic of Si-FinFET depending on the electrical characteristics of the channel (I ON /I OFF , SS, VT, DIBL). The MuGFET simulation tool has been using to investigate the electrical characteristics of Si-FinFET.
Ahmed Mahmood, Yasir Hashim, Hadi Bin Manap   +2 more
openaire   +1 more source

Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation

Discover Nano, 2023
In this paper, we propose an inductive line tunneling FET using Epitaxial Tunnel Layer with Ge-Source and Charge Enhancement Insulation (CEI ETL GS-iTFET).
Jyi-Tsong Lin, Yen-Chen Chang
doaj   +1 more source

Mechanisms of Temperature‐Dependent Hysteresis in Freestanding BaTiO3/MoS2 Heterostructures [PDF]

Advanced science
Freestanding ferroelectric BaTiO3 membranes are combined with monolayer MoS2 into 2D field‐effect transistors. At room temperature they provide ultrahigh‐κ gating with steep subthreshold swing and minimal hysteresis. Upon cooling, strong ferroelectric switching produces two stable memory states with long retention times.
Pucher T, Mompeán F, Rouco V, León C, Santamaría J, Munuera C, García‐Hernández M, Castellanos‐Gomez A.   +7 more
europepmc   +2 more sources

GaN Nanotube FET With Embedded Gate for High Performance, Low Power Applications

IEEE Journal of the Electron Devices Society, 2020
On the road of CMOS device continuously scaling, there are lots of challenges regarding the device structure and material engineering. GaN channel has recently been used in MOSFETs and achieved excellent performance.
Ke Han, Jiawei Li, Zhongliang Deng, Yannan Zhang, Shanglin Long   +4 more
doaj   +1 more source

Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability

IEEE Journal of the Electron Devices Society, 2022
In this article, sub-10 nm top width nanowire In0.53Ga0.47As gate-all-around (GAA) MOSFETs with improved subthreshold characteristics and reliability are demonstrated.
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Jing-Yuan Wu, Si-Meng Chen, Nhan-Ai Tran, Heng-Tung Hsu, Edward Yi Chang   +7 more
doaj   +1 more source

Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel [PDF]

Journal of Electrical and Computer Engineering Innovations, 2018
Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated.Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel ...
M. Karbalaei, D. Dideban, N. Moezi
doaj   +1 more source

Analysis of subthreshold swing in junctionless double gate MOSFET using stacked high-k gate oxide [PDF]

, 2021
In this paper, the subthreshold swing was observed when the stacked high-k gate oxide was used for a junctionless double gate (JLDG) MOSFET. For this purpose, a subthreshold swing model was presented using the series-type potential model derived from the
Jung, Hakkee, Hakkee Jung
core   +1 more source

Polarization Gradient Effect of Negative Capacitance LTFET

Micromachines, 2022
In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO2) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD.
Hao Zhang, Shupeng Chen, Hongxia Liu, Shulong Wang, Dong Wang, Xiaoyang Fan, Chen Chong, Chenyu Yin, Tianzhi Gao   +8 more
doaj   +1 more source

Bias-Independent Subthreshold Swing in Nanoscale Cold-Source Field-Effect Transistors by Drain Density-of-States Engineering [PDF]

, 2022
We report a strategy to design nanoscale cold-source field-effect transistors (CS-FETs) with bias-independent sub-60 mV/dec subthreshold swing (SS). By first-principles calculations and quantum-transport simulations, we reveal that the energy alignment ...
Li, Yuan, Lu, Fei, Liu, Kunyi
core   +1 more source