Results 71 to 80 of about 361,658 (190)

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

, 2010
SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires.
Wang Y (Wang Ying), Yang FH (Yang Fuhua), Han WH (Han Weihua), Xiong Y (Xiong Ying), Han, WH, Chinese Acad Sci, Inst Semicond, Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China., Zhang YB (Zhang Yanbo), Yang XA (Yang Xiang)   +6 more
core  

Characterisation of an automated Dual Piston Pressure Swing Adsorption (DP-PSA) system [PDF]

, 2013
The drive to fast Pressure Swing Adsorption (PSA) processes leads to the challenge of designing and analysing experiments that allow the testing of adsorbents under fast cycle conditions. Here we present the Dual Piston-Pressure Swing Adsorption (DP-PSA)
Brandani, Stefano, Dang, Wenli, Friedrich, Daniel   +2 more
core   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2

Nanoscale Research Letters, 2019
Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−x Zr x O2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of
Yue Peng, Yan Liu, Genquan Han, Jincheng Zhang, Yue Hao   +4 more
doaj   +1 more source

High‐Responsivity and Fast‐Response Organic Phototransistor Based on Dinaphtho[2,3‐b:2′,3′‐f]Thieno[3,2‐b]Thiophene

Advanced Electronic Materials, EarlyView.
Low‐temperature Al/Al2O3/DNTT/Au organic phototransistors fabricated on flexible PEN combine high responsivity to blue light (≈250 A W−1 at 39 nW cm−2) with detectable modulated photoresponse up to 150 kHz, making them promising for ultra‐low‐light sensing and moderate‐speed optical links.
Antonio Caldarelli, Antonio Vettoliere, Paolo Scotto Di Vettimo, Marcello Campajola, Gino Giusi, Vincenzo Izzo, Alberto Aloisio, Ettore Sarnelli   +7 more
wiley   +1 more source

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

, 2020
Extended Abstract Subthreshold swing (SS) is an important metric for the performance of field-effect transistors (FETs). The SS represents the change in gate voltage which must be applied in order to create a one decade increase in the output current ...
W Soree, C L Royer, Magnus, S G Cristoloveanu ; W, B Groeseneken, A S Vandenberghe, G Verhulst, A Zaslavsky, J Wan   +8 more
core  

A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current [PDF]

, 2014
In this paper, we demonstrate a steep Subthreshold Slope (SS) silicon FinFET with Schottky-barrier source/drain. The device shows a minimal SS of 3.4 mV/dec and an average SS of 6.0 mV/dec over 5 decades of current swing.
De Micheli, Giovanni, De Marchi, Michele, Jian Zhang, Pierre-Emmanuel Gaillardon, Giovanni De Micheli, Zhang, Jian, Michele De Marchi, Gaillardon, Pierre-Emmanuel   +7 more
core   +2 more sources

Balancing Injection and Short‐Channel Effects in Organic Permeable Base Transistors via Thickness Scaling

Advanced Electronic Materials, EarlyView.
Organic permeable base transistors are shown to benefit from balanced control of the semiconductor layers above and below the permeable base. Simulations and experiments indicate that the top semiconductor layer affects charge injection and lateral transfer length, while the bottom layer modulates the collector‐induced short‐channel effects.
Sun‐Woo Jo, Songhyun Kim, Sanghoon Park, Hanul Moon, Seunghyup Yoo   +4 more
wiley   +1 more source

High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing

Nanoscale Research Letters, 2019
This paper investigates the impacts of post metal annealing (PMA) and post deposition annealing (PDA) on the electrical performance of Ge p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ZrO2 dielectric.
Huan Liu, Genquan Han, Yan Liu, Yue Hao
doaj   +1 more source