Results 71 to 80 of about 1,298 (156)

Laser‐assisted in situ fabrication of atomically thin Ga2O3 films for dielectric applications

FlexMat, EarlyView.
A confinement template‐assisted squeeze method, in conjunction with laser‐assisted in situ oxidation, facilitates fabrication of centimeter‐scale and atomically thin gallium oxide films from liquid gallium under room temperature conditions. This low‐damage approach avoids thermal degradation of sensitive materials and supports high‐performance field ...
Erzhuo Zhang, Guangyu Yang, Qiwei Sun, Jing Liu, Han Wang, Junran Zhang, Junlei Zhao, Lin Wang, Mengyuan Hua, Xiaolong Chen   +9 more
wiley   +1 more source

Effect of Gate Length Scaling on Various Performance Parameters in DG-FinFETs: a Simulation Study [PDF]

Журнал нано- та електронної фізики, 2012
This paper presents a simulation study on the gate length scaling of a double gate (DG) FinFET. To achieve channel lengths smaller than 20 nm, innovative device architectures will be necessary to continue the benefits previously acquired through scaling.
Rakesh Vaid, Meenakshi Chandel
doaj  

Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors

IEEE Journal of the Electron Devices Society, 2019
Present work demonstrates the vertically double stacked nanosheet (NS) p-channel polycrystalline silicon (poly-Si) junctionless field-effect transistors (JL-FET) with tri-gate, omega-gate, and gate all around (GAA) structure.
Meng-Ju Tsai, Kang-Hui Peng, Chong-Jhe Sun, Siao-Cheng Yan, Chieng-Chung Hsu, Yu-Ru Lin, Yu-Hsien Lin, Yung-Chun Wu   +7 more
doaj   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Steep switching in trimmed-gate tunnel FET

AIP Advances, 2018
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda   +5 more
doaj   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices

Small, EarlyView.
The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis, Filimon Zacharatos, Avraham Twitto, Michal Poplinger, Adi Levi, Amaia Pesquera, Amaia Zurutuza, Iakovos Kritikos, Stefania Skorda, Alexandros El Sachat, Yuri Mikhlin, Doron Naveh, Ioanna Zergioti   +12 more
wiley   +1 more source

A Single‐Crystalline High‐κ K2Mo3O10 Dielectric for Two‐Dimensional Field‐Effect Transistors

SusMat, EarlyView.
K2Mo3O10 nanosheet can be synthesized by CVD method with a wide bandgap (∼4.09 eV) and high dielectric constant (∼39). The MoS2 FET with K2Mo3O10 as the top‐gate dielectric exhibits a steep SS as low as 76 mV dec−1 with an average of approximately 140 mV dec−1 and an on/off current ratio of up to 107 with an average of approximately 106.
Zhihang Zhang, Tianyu Zang, Weikang Dong, Ping Wang, Xiangwei Huang, Yan Xiong, Xiang Miao, Jiadong Zhou   +7 more
wiley   +1 more source

From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors

physica status solidi (a), Volume 223, Issue 15, 5 August 2026.
Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh, Alessandro Puddu, Slawomir Prucnal, Sebastian Lehmann, Kornelius Nielsch, Yordan M. Georgiev, Ahmad Echresh, Artur Erbe   +7 more
wiley   +1 more source