Results 71 to 80 of about 1,273 (146)

Effect of Gate Length Scaling on Various Performance Parameters in DG-FinFETs: a Simulation Study [PDF]

Журнал нано- та електронної фізики, 2012
This paper presents a simulation study on the gate length scaling of a double gate (DG) FinFET. To achieve channel lengths smaller than 20 nm, innovative device architectures will be necessary to continue the benefits previously acquired through scaling.
Rakesh Vaid, Meenakshi Chandel
doaj  

Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors

IEEE Journal of the Electron Devices Society, 2019
Present work demonstrates the vertically double stacked nanosheet (NS) p-channel polycrystalline silicon (poly-Si) junctionless field-effect transistors (JL-FET) with tri-gate, omega-gate, and gate all around (GAA) structure.
Meng-Ju Tsai, Kang-Hui Peng, Chong-Jhe Sun, Siao-Cheng Yan, Chieng-Chung Hsu, Yu-Ru Lin, Yu-Hsien Lin, Yung-Chun Wu   +7 more
doaj   +1 more source

Steep switching in trimmed-gate tunnel FET

AIP Advances, 2018
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda   +5 more
doaj   +1 more source

Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

IEEE Journal of the Electron Devices Society
The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing
Yuxin Liu, Qiang Liu, Jin Chen, Zhiqiang Mu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors

Advanced Electronic Materials
The pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs).
Fida Ali, Hyungyu Choi, Nasir Ali, Yasir Hassan, Tien Dat Ngo, Faisal Ahmed, Won‐Kyu Park, Zhipei Sun, Won Jong Yoo   +8 more
doaj   +1 more source

Demonstration of SA TG Coplanar IGZO TFTs With Large Subthreshold Swing Using the Back-Gate Biasing Technique for AMOLED Applications

IEEE Journal of the Electron Devices Society
We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, exhibit superior characteristics as driving transistors in ...
Chae-Eun Oh, Ye-Lim Han, Dong-Ho Lee, Jin-Ha Hwang, Hwan-Seok Jeong, Myeong-Ho Kim, Kyoung-Seok Son, Sunhee Lee, Sang-Hun Song, Hyuck-In Kwon   +9 more
doaj   +1 more source

Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

Journal of Physics Communications
In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured.
Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin   +7 more
doaj   +1 more source

Ultrasensitive Hydrogen Detection Using GNRFET Sensor: Multimetric Optimization via Geometry, Temperature, and Oxygen Environment. [PDF]

Micromachines (Basel)
Anvarifard MK, Ramezani Z.
europepmc   +1 more source

Design and simulation of a p-type dual interbridge treeFET with comprehensive DC, analog/RF, and linearity analysis for CMOS circuit applications. [PDF]

Sci Rep
Mounika S, Nanda U.
europepmc   +1 more source

Oxide induced degradation in MoS₂ field-effect transistors. [PDF]

NPJ 2D Mater Appl
Ducry F, Van Troeye B, Dossena M, Luisier M, Pourtois G, Afzalian A.   +5 more
europepmc   +1 more source