Results 141 to 150 of about 13,751 (195)

Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]

Sci Rep
Saravanan M, Parthasarathy E, Rahi SB, Natarajan R.   +3 more
europepmc   +1 more source

Steep-Slope CuInP₂S₆ Ferroionic Threshold Switching Field-Effect Transistor for Implementation of Artificial Spiking Neuron. [PDF]

Adv Mater
Baek S, Kim YK, Lee SM, Choi H, Park JS, Jang BC, Lee S.   +6 more
europepmc   +1 more source

Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]

Sci Rep
Wu TL, Ho HJ, Liu CW, Singh SK, Chen YC, Chen HW.   +5 more
europepmc   +1 more source

Modeling and simulation of ZnO-based TFTs by dielectric engineering and temperature analysis for enhanced performance. [PDF]

Sci Rep
Kumar P, Askari SSA, Das MK.
europepmc   +1 more source

High-κ samarium oxysulfate dielectric for two-dimensional electronics with enhanced gate coupling. [PDF]

Nat Commun
Yuan J, Jian C, Gong Y, Ju Q, Cai Q, Kang J, Liu W.   +6 more
europepmc   +1 more source

Energy-efficient neuromorphic system using novel tunnel FET based LIF neuron design for adaptable threshold logic and image analysis applications. [PDF]

Sci Rep
Bashir F, Zahoor F, Alzahrani A, Abbas H.   +3 more
europepmc   +1 more source

Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications. [PDF]

Nat Electron
Kumar AS, Dalcanale S, Uren MJ, Pomeroy JW, Smith MD, Parke JA, Howell RS, Kuball M.   +7 more
europepmc   +1 more source

High drain field impact ionization transistors as ideal switches. [PDF]

Nat Commun
Yuan B, Chen Z, Chen Y, Tang C, Chen W, Cheng Z, Zhao C, Hou Z, Zhang Q, Gan W, Gao J, Wang J, Xu J, Hu G, Wu Z, Luo K, Luo M, Zhang Y, Zhang Z, Xiong S, Cong C, Bao W, Ma S, Wan J, Zhou P, Lu Y.   +25 more
europepmc   +1 more source

A clean van der Waals interface between the high-<i>k</i> dielectric zirconium oxide and two-dimensional molybdenum disulfide. [PDF]

Nat Electron
Yan H, Wang Y, Li Y, Phuyal D, Liu L, Guo H, Guo Y, Lee TL, Kim M, Jeong HY, Chhowalla M.   +10 more
europepmc   +1 more source

High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems. [PDF]

Nat Commun
Kang T, Park J, Lee SY, Jung H, Jeon J, Kim YH, Lee S.   +6 more
europepmc   +1 more source