Results 161 to 170 of about 13,751 (195)

Fast Growth of Centimeter-Scale Molybdenum Disulfide Single Crystal for Energy-Efficient Logic Circuits. [PDF]

Research (Wash D C)
Zheng B, Wang H, Wang Y, Zheng W, Liu Y, Wu G, Li M, Wang S, Sun X, Zhu C, Yang X, Xu Z, Zhu M, Xiang L, Li D, Pan A.   +15 more
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Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

IEEE Electron Device Letters, 2007
We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate oxide and silicon-on-insulator layer thicknesses were scaled down to 2
null Woo Young Choi, null Byung-Gook Park, null Jong Duk Lee, null Tsu-Jae King Liu   +3 more
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Subthreshold swing (SS) degradation as the origin of SS saturation in nanoscale cryogenic gate-all-around MOSFETs

Semiconductor Science and Technology
Abstract We investigate the physical mechanism linking subthreshold swing (SS) degradation and SS saturation in cryogenic n-type gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs). While previous studies attributed SS saturation to source-to-drain direct tunneling (SDDT), we clarify that SDDT alone does ...
Jaehyun Lee, Cristina Medina-Bailon, Oves Badami, Vihar P Georgiev   +3 more
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Analysis of novel SGOI-TFET with record low subthreshold swing (SS) and high I<inf>on</inf>/I<inf>off</inf> ratio

2014 International Conference on Computing for Sustainable Global Development (INDIACom), 2014
Sweta Chander, Om Prakash Mahto, Vivek Chander, S. Baishya   +3 more
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59.9 mV·dec Subthreshold Swing Achieved in Zinc Tin Oxide TFTs With In Situ Atomic Layer Deposited AlO Gate Insulator

IEEE Electron Device Letters, 2023
Here, by depositing both the zinc tin oxide (ZTO) channel and Al2O3 gate dielectric layer using atomic layer deposition (ALD) without breaking vacuum, we made TFTs with a steep subthreshold swing ( $\textit {SS}$ ) of 59.9mV $\cdot $ dec $^{-{1}}$ , near
Tonglin L. Newsom, C. Allemang, Tae H. Cho, N. Dasgupta, R. L. Peterson   +4 more
semanticscholar   +1 more source

Improved Subthreshold Swing of MoS₂ Negative-Capacitance Transistor by Using HfZrAlO as Ferroelectric Layer of Gate-Stack

IEEE Transactions on Electron Devices, 2023
In this work, a hafnium–zirconium–aluminum–oxide (HZAO) is proposed and atomic layer deposition (ALD), and its ferroelectricity is shown to be stronger than hafnium–zirconium–oxide (HZO) by measuring polarization versus electric field ( ${P} - {E ...
Xinge Tao, Lu Liu, Jingping Xu
semanticscholar   +1 more source

Redox‐Mediated Single‐Molecule Transistor with A Subthreshold Swing Down To 120 mV Decade−1

Advanced Functional Materials, 2023
The single‐molecule electronic devices offer the ultimate solution to miniaturize integrated circuits, and subthreshold swing (SS) is the key indicator of the power consumption for single‐molecule transistors but is still quite restricted. In this study,
Y. Li, Wei Xu, Yuwan Zou, Jing Li, Tengyang Gao, Ruiyun Huang, Lichuan Chen, Zongyuan Xiao, Jia Shi, Yang Yang, Wenjing Hong   +10 more
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Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films.

ACS Applied Materials and Interfaces, 2023
The emergence of complementary metal-oxide semiconductor (CMOS)-compatible HfO2-based ferroelectric materials provides a promising way to achieve ferroelectric field-effect transistors (FeFETs) with a steep subthreshold swing (SS) reduced to below the ...
Yuchen Wang, Si Liu, Zhen Luo, Hui Gan, He Wang, Jiachen Li, Xinzhe Du, Haoyu Zhao, Shengchun Shen, Yuewei Yin, Xiaoguang Li   +10 more
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Small Subthreshold Swing Diamond Field Effect Transistors With SnO2 Gate Dielectric

IEEE Transactions on Electron Devices, 2022
A small subthreshold swing (SS) hydrogen-terminated diamond field-effect transistor is realized by using a wide bandgap material (SnO2). Results showed an SS of 106.4 mV/dec, which should be ascribed to the low interface state density (1.05 $\times10 ...
Shi He, Wei Wang, Genqiang Chen, Shumiao Zhang, Qi Li, Qianwen Zhang, Xiaohui Chang, Yanfeng Wang, Minghui Zhang, Hongxing Wang   +9 more
semanticscholar   +1 more source

Near-Ideal Subthreshold Swing in InAlN/GaN Schottky Gate High Electron Mobility Transistor Using Carbon-Doped GaN Buffer

IEEE Transactions on Electron Devices, 2022
This work presents a comparative study of the subthreshold swing (SS) in InAlN/GaN-based high electron mobility transistor (HEMT), with and without carbon doping in the buffer layer.
Sujan Sarkar, Ramdas P. Khade, Ajay Shanbhag, N. Dasgupta, A. DasGupta   +4 more
semanticscholar   +1 more source