Results 11 to 20 of about 13,751 (195)

Nano-Dimensional Properties of Si-FinFET Transistor Based on ION/IOFF Ratio and Subthreshold Swing (SS)

Journal of Nanoscience and Technology, 2018
This paper presents design the optimal channel dimensions for Silicon Fin Feld Effect Transistor (Si-FinFET) for improvement electrical characteristic of Si-FinFET depending on the electrical characteristics of the channel (I ON /I OFF , SS, VT, DIBL). The MuGFET simulation tool has been using to investigate the electrical characteristics of Si-FinFET.
Ahmed Mahmood, Yasir Hashim, Hadi Bin Manap   +2 more
openaire   +2 more sources

Temperature Characteristics of Nano-Dimensional FinFET with P Type GaP Semiconductor Channel Based on ION/IOFF and Subthreshold Swing (SS)

AIUB Journal of Science and Engineering (AJSE)
This study discusses the effects of working temperature on the GaP-FinFET structure. Using the Multi-Gate Field Effect Transistors (MuGFET) simulation tool, the properties of FinFET have been generated over a temperature range of T=0 °C to T=125 °C.
Yasir Hashim, Safwan Mawlood Hussein
openaire   +2 more sources

Demonstration of SA TG Coplanar IGZO TFTs With Large Subthreshold Swing Using the Back-Gate Biasing Technique for AMOLED Applications

IEEE Journal of the Electron Devices Society
We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, exhibit superior characteristics as driving transistors in ...
Chae-Eun Oh, Ye-Lim Han, Dong-Ho Lee, Jin-Ha Hwang, Hwan-Seok Jeong, Myeong-Ho Kim, Kyoung-Seok Son, Sunhee Lee, Sang-Hun Song, Hyuck-In Kwon   +9 more
doaj   +2 more sources

Review of: "The most outstanding feature of nMOS  is the capacity to produce a reverse subthreshold swing (SS) of less than the 60 mV/decade thermal limit (at 300 K )"

Qeios
Alfred Courtis
openaire   +2 more sources

Chip-Scale Graphene/IGZO Cold Source FET Array Enabling Sub-60 mV dec^-1 Super-Steep Subthreshold Swing. [PDF]

Adv Mater
Super‐steep subthreshold swing (SS) below 60 mV dec−1 is demonstrated in graphene/IGZO cold source transistor arrays. Linear density of states with Dirac cone in graphene suppressed the Boltzmann thermal tail, while high‐k HfO2 dielectric having small body factor enhanced gating efficiency, hereby further reducing SS. An average SS of ≈46.4 mV dec−1 is
Oh S, Kwon O, Yoon J, Cho E, Kim MJ, Seo W, Kim M, Kim S, Kwon Y, Jung YJ, Kang K, Park W, Kim Y, Cho B.   +13 more
europepmc   +2 more sources

EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)

International Islamic University Malaysia Engineering Journal, 2020
Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim, AHM Zahirul Alam, Naimah Binti Darmis   +2 more
doaj   +1 more source

Three Temperature Regimes in Subthreshold Characteristics of FD-SOI pMOSFETs From Room-Temperature to Cryogenic Temperatures

IEEE Journal of the Electron Devices Society, 2023
We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation ${T}\,\,=$ 300 K – 4.5 K. Subthreshold swing (SS)-plateau at 125 K – 50 K in combination with SS-linearity at ${T}\,\,=$ 300 K &
Yo-Ming Chang, Ting Tsai, Yu-Wen Chiu, Horng-Chih Lin, Pei-Wen Li   +4 more
doaj   +1 more source

Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Energy efficiency in digital circuits is limited by the subthreshold swing (SS), which defines how abruptly a transistor switches between its ON and OFF-states.
Daniel S. Truesdell, Sheikh Z. Ahmed, Avik W. Ghosh, Benton H. Calhoun   +3 more
doaj   +1 more source

Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor [PDF]

Журнал нано- та електронної фізики, 2016
The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN ...
Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza   +2 more
doaj   +1 more source

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Nature Communications, 2020
Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed.
Xiuyan Li, Akira Toriumi
doaj   +1 more source