Results 141 to 150 of about 279,244 (245)

Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

open access: yesAdvanced Electronic Materials, EarlyView.
The first Ge n‐channel FeFET memory devices have been demonstrated. By employing an Al2O3/AlN interfacial layer combined with low thermal budget microwaving annealing, a desirable memory window as well as triple‐level cell storage capability with good reliability have been achieved.
Sheng‐Yen Zheng   +3 more
wiley   +1 more source

Different Ras isoforms regulate synaptic plasticity in opposite directions. [PDF]

open access: yesEMBO J
López-Merino E   +10 more
europepmc   +1 more source

Two‐Terminal MoS2‐Based Retinomorphic Devices with Enhanced Synaptic Plasticity

open access: yesAdvanced Electronic Materials, EarlyView.
The two‐terminal retinormorphic devices are demonstrated on the functionalized substrate through plasma treatment. The functionalized substrate serves recombination centers, which can control the decay dynamics of excited carriers. These make modulating synaptic plasticity possible in two‐terminal retinormorphic devices.
Younghoon Lim   +8 more
wiley   +1 more source

An Ultrathin Optoelectronic Memristor with Dual‐Functional Photodetector and Optical Synapse Behaviors for Neuromorphic Vision

open access: yesAdvanced Electronic Materials, EarlyView.
An optoelectronic memristor based on an ultrathin periodic heterostructure is proposed. The unique structure enables the integration of multiple functionalities, including those of a photodetector, electric synapse, and optical synapse. This work provides a framework to design ultrathin, multifunctional, and energy‐efficient neuromorphic chips for ...
Lilan Zou   +4 more
wiley   +1 more source

Exotic Photothermal Response in Ti‐Based MXene Optoelectronic Devices

open access: yesAdvanced Electronic Materials, EarlyView.
This work uncovers the photothermal response of Ti‐based MXene devices to laser irradiation under different experimental conditions. Ti2CTx exhibits an asymmetric photothermal response, characterized by three orders of magnitude slower relaxation kinetics than Ti3C2Tx.
Stefano Ippolito   +4 more
wiley   +1 more source

AMPA Receptors in Synaptic Plasticity, Memory Function, and Brain Diseases. [PDF]

open access: yesCell Mol Neurobiol
de León-López CAM   +2 more
europepmc   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

open access: yesAdvanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu   +4 more
wiley   +1 more source

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