Results 1 to 10 of about 24,114 (195)

The Modeling of a Single-Electron Bipolar Avalanche Transistor in 150 nm CMOS [PDF]

open access: yesSensors
This paper addresses the complex behavior of Single-Electron Bipolar Avalanche Transistors (SEBATs) through a comprehensive modeling approach. TCAD simulations were used to analyze the behavior of the device during avalanche pulses triggered by electron ...
Abderrezak Boughedda   +6 more
doaj   +2 more sources

TCAD Simulation of Resistive Switching Devices: Impact of ReRAM Configuration on Neuromorphic Computing [PDF]

open access: yesNanomaterials
This paper presents a method for modeling ReRAM in TCAD and validating its accuracy for neuromorphic systems. The data obtained from TCAD are used to analyze the accuracy of the neuromorphic system.
Seonggyeom Kim, Jonghwan Lee
doaj   +2 more sources

TCAD Simulation of Two Photon Absorption—Transient Current Technique Measurements on Silicon Detectors and LGADs [PDF]

open access: yesSensors
Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes.
Sebastian Pape   +3 more
doaj   +2 more sources

Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model

open access: yesIEEE Journal of the Electron Devices Society, 2021
This paper presents the calibration of the novel kinetic velocity model (KVM) in the drift-diffusion (DD) transport approach, which can account for the ballistic effect in short-channel devices.
Ko-Hsin Lee   +3 more
doaj   +1 more source

TCAD - A Progressive Tool for Engineers

open access: yesRadioengineering, 1993
The semiconductor industry is continuously striving to improve the performance of electron devices and circuits. It implies the need for better understanding of their basic behaviour.
I. Adamcik   +3 more
doaj   +2 more sources

Restructuring TCAD System: Teaching Traditional TCAD New Tricks

open access: yes2021 IEEE International Electron Devices Meeting (IEDM), 2021
Traditional TCAD simulation has succeeded in predicting and optimizing the device performance; however, it still faces a massive challenge - a high computational cost. There have been many attempts to replace TCAD with deep learning, but it has not yet been completely replaced.
Myung, Sanghoon   +5 more
openaire   +2 more sources

COMBINED SIMULATION METHODOLOGY FOR A COMPLETECHARACTERIZATION OF IONIZING RADIATION EFECTS IN DETECTION DEVICES

open access: yesAnales (Asociación Física Argentina), 2023
Ionizing radiation detection devices have been widely used in recent years in various applications and experimental fields, such as high energy physics, nuclear physics, and medical imaging.
N.E. Martín, M. Sofo Haro, M. Valente
doaj   +1 more source

Material Modeling in Semiconductor Process Applications

open access: yesJournal of Microelectronic Manufacturing, 2020
During the past decade, significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel.
Boris A. Voinov   +4 more
doaj   +1 more source

Development of the reactive force field and silicon dry/wet oxidation process modeling

open access: yesnpj Computational Materials, 2023
We developed the Si/O/H reactive force field parameter set and applied to silicon dry/wet oxidation process to understand the underlying physics of the thermal oxidation of the Si(100) surface. Through a systematic development of the Si/O parameter using
Junichi Noaki   +3 more
doaj   +1 more source

Traumatic Carotid Artery Dissection — A Case Report

open access: yesBrazilian Neurosurgery, 2023
Traumatic carotid artery dissection (TCAD) usually occurs after a direct cervical trauma or blunt trauma that causes hyperextension and excessive rotation of the neck.
Taís Otilia Berres   +7 more
doaj   +1 more source

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