Results 1 to 10 of about 24,214 (199)
The Modeling of a Single-Electron Bipolar Avalanche Transistor in 150 nm CMOS [PDF]
SensorsThis paper addresses the complex behavior of Single-Electron Bipolar Avalanche Transistors (SEBATs) through a comprehensive modeling approach. TCAD simulations were used to analyze the behavior of the device during avalanche pulses triggered by electron ...
Abderrezak Boughedda +6 more
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Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model
IEEE Journal of the Electron Devices Society, 2021 This paper presents the calibration of the novel kinetic velocity model (KVM) in the drift-diffusion (DD) transport approach, which can account for the ballistic effect in short-channel devices.
Ko-Hsin Lee +3 more
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Restructuring TCAD System: Teaching Traditional TCAD New Tricks
2021 IEEE International Electron Devices Meeting (IEDM), 2021 Traditional TCAD simulation has succeeded in predicting and optimizing the device performance; however, it still faces a massive challenge - a high computational cost. There have been many attempts to replace TCAD with deep learning, but it has not yet been completely replaced.
Myung, Sanghoon +5 more
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TCAD - A Progressive Tool for Engineers
Radioengineering, 1993 The semiconductor industry is continuously striving to improve the performance of electron devices and circuits. It implies the need for better understanding of their basic behaviour.
I. Adamcik +3 more
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Anales (Asociación Física Argentina), 2023 Ionizing radiation detection devices have been widely used in recent years in various applications and experimental fields, such as high energy physics, nuclear physics, and medical imaging.
N.E. Martín, M. Sofo Haro, M. Valente
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Material Modeling in Semiconductor Process Applications
Journal of Microelectronic Manufacturing, 2020 During the past decade, significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel.
Boris A. Voinov +4 more
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Development of the reactive force field and silicon dry/wet oxidation process modeling
npj Computational Materials, 2023 We developed the Si/O/H reactive force field parameter set and applied to silicon dry/wet oxidation process to understand the underlying physics of the thermal oxidation of the Si(100) surface. Through a systematic development of the Si/O parameter using
Junichi Noaki +3 more
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Traumatic Carotid Artery Dissection — A Case Report
Brazilian Neurosurgery, 2023 Traumatic carotid artery dissection (TCAD) usually occurs after a direct cervical trauma or blunt trauma that causes hyperextension and excessive rotation of the neck.
Taís Otilia Berres +7 more
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Effect of Mask Geometry Variation on Plasma Etching Profiles
Micromachines, 2023 It is becoming quite evident that, when it comes to the further scaling of advanced node transistors, increasing the flash memory storage capacity, and enabling the on-chip integration of multiple functionalities, “there’s plenty of room at the top”. The
Josip Bobinac +8 more
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The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy
IEEE Access, 2020 We present numerical methods to enable accurate and robust level-set based simulation of anisotropic wet etching and non-planar epitaxy for semiconductor fabrication.
Alexander Toifl +6 more
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