Results 101 to 110 of about 24,114 (195)

Designs and electric properties studied of 3D trench electrode Si detector with adjustable central collection electrode

AIP Advances, 2018
In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao, Manwen Liu, Ya Zhang, Jun Zhao, Zheng Li   +4 more
doaj   +1 more source

Research of self-formation nanostructures / Nanodarinių formavimosi procesų tyrimas

Mokslas: Lietuvos Ateitis, 2011
Lateral etching processes for the modeling of the geometry of self-formation nanostructures with Silvaco TCAD Athena program are analyzed. Self-formation nanostructures is modeled with different mask selectivity values equal to 2, 10, 40 and 100 with ...
Romas Petrauskas
doaj  

Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks

IEEE Journal of the Electron Devices Society
Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions.
Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao   +5 more
doaj   +1 more source

Process Integration of U‐Shape Ambipolar Schottky–Barrier Field‐Effect Transistors

Advanced Electronic Materials
Research on transistors with various architectures is crucial for developing high‐performance, compact devices, as they improve the functionality of integrated circuits within the same or smaller footprint.
Cigdem Cakirlar, Bruno Neckel Wesling, Konstantinos Moustakas, Giulio Galderisi, Sylvain Pelloquin, Oskar Baumgartner, Mischa Thesberg, Thomas Mikolajick, Guilhem Larrieu, Jens Trommer   +9 more
doaj   +1 more source

Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

IEEE Journal of the Electron Devices Society
This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo, Jihwan Lee, Gyunseok Ryu, Myounggon Kang   +3 more
doaj   +1 more source

TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs

Power Electronic Devices and Components
The long-term reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is a crucial factor in their widespread adoption for high-power and high-frequency applications.
Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani   +7 more
doaj   +1 more source

Impact of Aging, Self-Heating, and Parasitics Effects on NSFET and CFET

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents a comparative analysis of complementary field-effect transistor (CFET) and nanosheet FET (NSFET) architectures, with a focus on self-heating effects (SHEs), negative bias temperature instability (NBTI), hot carrier degradation (HCD ...
Swati Deshwal, Sufia Shahin, Anirban Kar, Yogesh S. Chauhan, Hussam Amrouch   +4 more
doaj   +1 more source

TCAD Silicon Sensor Simulations [PDF]

Proceedings of The 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011), 2012
openaire   +2 more sources

Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor. [PDF]

Micromachines (Basel)
Liu Y, Liu Y, Liao X, Xu C, He Y, Yang Y.   +5 more
europepmc   +1 more source

T-Cadherin Finetunes Proliferation-Differentiation During Adipogenesis via PI3K-AKT Signaling Pathway. [PDF]

Int J Mol Sci
Klimovich P, Brodsky I, Dzreyan V, Ivleva M, Grigorieva O, Meshcheriakov M, Semina E, Sysoeva V, Tkachuk V, Rubina K.   +9 more
europepmc   +1 more source