Results 111 to 120 of about 24,114 (195)

TCAD model radiation damage

open access: yes
New TCAD model to reproduce the macroscopic effects of radiation damage in the bulk and at the silicon-oxide interface. Comparison with experimental results on irradiated pixel sensors, comprehensive of those produced within Task 7.3. (Task 7.2)
openaire   +1 more source

Pre-Silicon Accurate SPICE Modeling of Trench MOSFETs via Advanced TCAD Simulations and Dynamic Validation. [PDF]

open access: yesMicromachines (Basel)
Tariq A   +7 more
europepmc   +1 more source

Extraction of Electron and Hole Drift Velocities in Thin 4H-SiC PIN Detectors Using High-Frequency Readout Electronics. [PDF]

open access: yesSensors (Basel)
Gsponer A   +7 more
europepmc   +1 more source

Incorporation of Temperature Impact on Hot-Carrier Degradation into Compact Physics Model. [PDF]

open access: yesMicromachines (Basel)
Tyaginov S   +9 more
europepmc   +1 more source

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