Results 111 to 120 of about 24,214 (199)

Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI. [PDF]

Sci Rep
Hsiao YS, Chang PJ, Chen BR, Rai R, Singh SK, Chauhan YS, Lee WJ, Chen NY, Wu TL.   +8 more
europepmc   +1 more source

Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor. [PDF]

Micromachines (Basel)
Liu Y, Liu Y, Liao X, Xu C, He Y, Yang Y.   +5 more
europepmc   +1 more source

TCAD Simulation of STI Depth and SiO₂/Silicon Interface Trap Modulation Effects on Low-Frequency Noise in HZO-Based Nanosheet FETs. [PDF]

Nanomaterials (Basel)
Lee W, Lee J.
europepmc   +1 more source

TCAD model radiation damage

New TCAD model to reproduce the macroscopic effects of radiation damage in the bulk and at the silicon-oxide interface. Comparison with experimental results on irradiated pixel sensors, comprehensive of those produced within Task 7.3. (Task 7.2)
openaire   +1 more source

T-Cadherin Finetunes Proliferation-Differentiation During Adipogenesis via PI3K-AKT Signaling Pathway. [PDF]

Int J Mol Sci
Klimovich P, Brodsky I, Dzreyan V, Ivleva M, Grigorieva O, Meshcheriakov M, Semina E, Sysoeva V, Tkachuk V, Rubina K.   +9 more
europepmc   +1 more source

Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs. [PDF]

Commun Eng
Lee KW, Kim IK, Jung SW, Jang MS, Hong SM.   +4 more
europepmc   +1 more source

Bilateral Carotid Artery Dissection After a Fall: A Case of Horner Syndrome Revealed on Examination. [PDF]

Clin Pract Cases Emerg Med
Spevack E, Weisner ZM, Nokovich E, Joyner M, Exley L.   +4 more
europepmc   +1 more source

Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs. [PDF]

Micromachines (Basel)
Cui W, Liao P, Wang Y, Guo J, Yang Y, Zhang DW, Xu H.   +6 more
europepmc   +1 more source

Terahercinio jutiklio modeliavimas TCAD programa

, 2016
Terahercinio jutiklio modeliavimas TCAD ...
openaire   +1 more source

Pre-Silicon Accurate SPICE Modeling of Trench MOSFETs via Advanced TCAD Simulations and Dynamic Validation. [PDF]

Micromachines (Basel)
Tariq A, Minardi G, Cinnera Martino V, Fazio E, Rinaudo S, Privitera G, Neri F, Corsaro C.   +7 more
europepmc   +1 more source