Results 131 to 140 of about 24,214 (199)

Advances in High-Voltage Power Electronics Using Ga₂O₃-Based HEMT: Modeling. [PDF]

Materials (Basel)
Alhasani R, Hussain H, Alkhamisah MA, Hiazaa A, Alharbi A.   +4 more
europepmc   +1 more source

Enabling scalable ferroelectric-based future generation vertical NAND flash with bonding-friendly architecture: strategies for erase and disturb optimization. [PDF]

Nanoscale Adv
Song I, Kim J, Lee S, Myeong I.
europepmc   +1 more source

Demonstration of accurate ID-VG characteristics modeling in SiC mosfets using separated artificial neural networks with small training dataset. [PDF]

Sci Rep
Chankla M, Chen BR, Singh SK, Chauhan YS, Lee WJ, Chen NY, Kanjanachuchai S, Wu TL.   +7 more
europepmc   +1 more source

Device to Circuit Co-Design Utilizing High-Performance PEALD Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems. [PDF]

Adv Sci (Weinh)
Wang W, Zhang T, Yuan Z, Peng H, Lan J, Li Z, Wu Y, Feng X, Lin L, Zhou F, Zhang P, Li Y.   +11 more
europepmc   +1 more source

Ultra-thin (<2 µm) silicon carbide free-standing membranes as beam position monitors for soft and tender X-ray beamlines. [PDF]

J Synchrotron Radiat
Medina E, Trovato G, Calcagno L, Kalbfleisch S, Birri M, Milluzzo G, Romano F, Sangregorio E, Moscato S, Milian FM, Giordanengo S, Vignati A, Camarda M.   +12 more
europepmc   +1 more source

Diffusion mechanism as cause of optical degradation in AlGaN-based UV-C leds investigated by TCAD simulations. [PDF]

Sci Rep
Roccato N, Piva F, Buffolo M, De Santi C, Trivellin N, Susilo N, Vidal DH, Muhin A, Sulmoni L, Wernicke T, Kneissl M, Meneghesso G, Zanoni E, Meneghini M.   +13 more
europepmc   +1 more source

Large-scale gate-all-around MoS₂ transistor array through lossless monolithic 3D integration. [PDF]

Natl Sci Rev
Chen C, Chen K, Zhao H, Lu S, Shang J, Jiang H, Gao L, He X, Jiang S, Chen Z, Zhang Z, Zhang X, Zhang Y.   +12 more
europepmc   +1 more source

Defect-Mediated Threshold Voltage Tuning in β-Ga₂O₃ MOSFETs via Fluorine Plasma Treatment. [PDF]

Nanomaterials (Basel)
Wang L, Zhang Y, Dong J, Wang J, Wang Z, Feng Y, Wang X, Shen S, Zhu H.   +8 more
europepmc   +1 more source

Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]

ACS Omega
Dudekula S, Jaiswal NK, Ebel T, Chowdam VP, Koo SM, Dhanaraj K.   +5 more
europepmc   +1 more source