Results 181 to 190 of about 24,114 (195)
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Advanced Theory of TCAD Process Simulation
2011A key simulation task in TCAD process simulation is to solve the diffusion equations over the simulation mesh to predict the impurity doping profile after thermal processing. In 3D TCAD, the simulation grid size is large and diffusion is often the most time-consuming simulation procedure.
Simon Li, Yue Fu
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2014
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Advanced Theory of TCAD Device Simulation
2011This chapter reviews the basic theories of device simulation within the framework of TCAD. Figure 3.1 shows a practical design of a device simulator of 3D TCAD capability with various modules. One may regard the drift-diffusion (DD) equation module as central building block of a 3D TCAD device simulator.
Simon Li, Yue Fu
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Numerical techniques in modern TCAD
2005Modeling and simulation are a crucial aid for reducing development cycle time and costs in modern semiconductor technology. New modeling concepts increasingly require long-term research performed in an interdisciplinary manner, and new numerical methods and algorithms are needed to implement these concepts.The manifold of physical phenomena inherent in
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Setting Up a 3D TCAD Simulation
2011In order to perform a 3D TCAD simulation, we first need the mask layout for all the process steps. The mask layout can be designed in a variety of software including drafting tools like Autodesk AutoCAD® and specialized EDA tools like Cadence Virtuoso® and Tanner L-Edit®.
Simon Li, Yue Fu
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TCAD calibration for FinFET reliability predictions
2022 IEEE International Integrated Reliability Workshop (IIRW), 2022Vishal Jha +3 more
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NUMERICAL SIMULATION OF SET USING TCAD
i-manager’s Journal on Electronics Engineering, 2021ASHRAF JAVED +2 more
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