Results 181 to 190 of about 24,214 (199)

Technology and TCAD tools

2007
Today much of the development of semiconductor devices and processes is done by TCAD as it offers unique possibilities in visualisation of processing steps, description of the physical changes and understanding of the interrelation of the process variables. Modelling of processes provides a way to interactively explore the fabrication process, studying
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Hierarchical TCAD device simulation of FinFETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015
A framework for FinFET design studies is presented. Our physics-based modeling approach allows to accurately capture the effects of channel cross-section, orientation and strain as well as contact resistance - for the first time all in one tool.
M. Karner, Z. Stanojevic, C. Kernstock, H.W. Cheng-Karner, O. Baumgartner   +4 more
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TCAD at the SRC

1998
The Semiconductor Research Corporation (SRC) is a consortium that manages IC manufacturing related research. The membership consists of IC manufacturing companies, their suppliers, and a number of affliated companies. Most of the research is conducted at US universities.
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Accuracy counts in modeling TCAD's future

IEEE Potentials, 2000
We are on the path to meet the major challenges ahead for TCAD. The emerging computational grid will ultimately solve the challenge of limited computational power. The Modular TCAD Framework will solve the TCAD software challenge once more developers agree to cooperate.
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Advanced Theory of TCAD Process Simulation

2011
A key simulation task in TCAD process simulation is to solve the diffusion equations over the simulation mesh to predict the impurity doping profile after thermal processing. In 3D TCAD, the simulation grid size is large and diffusion is often the most time-consuming simulation procedure.
Simon Li, Yue Fu
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2014
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Advanced Theory of TCAD Device Simulation

2011
This chapter reviews the basic theories of device simulation within the framework of TCAD. Figure 3.1 shows a practical design of a device simulator of 3D TCAD capability with various modules. One may regard the drift-diffusion (DD) equation module as central building block of a 3D TCAD device simulator.
Simon Li, Yue Fu
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Numerical techniques in modern TCAD

2005
Modeling and simulation are a crucial aid for reducing development cycle time and costs in modern semiconductor technology. New modeling concepts increasingly require long-term research performed in an interdisciplinary manner, and new numerical methods and algorithms are needed to implement these concepts.The manifold of physical phenomena inherent in
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Setting Up a 3D TCAD Simulation

2011
In order to perform a 3D TCAD simulation, we first need the mask layout for all the process steps. The mask layout can be designed in a variety of software including drafting tools like Autodesk AutoCAD® and specialized EDA tools like Cadence Virtuoso® and Tanner L-Edit®.
Simon Li, Yue Fu
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TCAD calibration for FinFET reliability predictions

2022 IEEE International Integrated Reliability Workshop (IIRW), 2022
Vishal Jha, Mazhar Hoque, Mihilat Manahile, Joseph Rascon   +3 more
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