Results 21 to 30 of about 24,114 (195)
Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment
Micromachines, 2023 The anti-ESD characteristic of the electronic system is paid more and more attention. Moreover, the on-chip electrostatic discharge (ESD) is necessary for integrated circuits to prevent ESD failures.
Fuxing Li +5 more
doaj +1 more source
Simulation Based DC and Dynamic Behaviour Characterization of Z2FET [PDF]
, 2017 This work presents a TCAD investigation of the operation of a Z2FET device for memory application, where the TCAD model is well calibrated to experimental hysteresis curves.
Adamu-Lema, Fikru +8 more
core +1 more source
Modeling radiation damage in TCAD [PDF]
Proceedings of The 26th International Workshop on Vertex Detectors — PoS(Vertex 2017), 2018 The aim of this work is to develop a TCAD radiation damage model at a device level, enabling a predictive insight on the electrical behaviour of detectors and aiming at their ultimate performance optimization for the operation at HL-LHC expected fluences (e.g. greater than 2.0 Ã-- 10 1 MeV equivalent neutrons/cm).
Passeri D, Moscatelli F, Morozzi A
openaire +3 more sources
TCAD Simulation of Novel Semiconductor Devices [PDF]
2021 IEEE 14th International Conference on ASIC (ASICON), 2021 Simulation of conventional and emerging electronic devices using Technology Computer Aided Design (TCAD) tools has been an essential part of the semiconductor industry as well as academic research. Computational efficiency and accuracy of the numerical modeling are the key criteria on which quality and usefulness of a TCAD tool are ascertained. Further,
Dutta, Tapas +9 more
openaire +1 more source
Accelerating Flux Calculations Using Sparse Sampling
Micromachines, 2018 The ongoing miniaturization in electronics poses various challenges in the designing of modern devices and also in the development and optimization of the corresponding fabrication processes. Computer simulations offer a cost- and time-saving possibility
Lukas Gnam +4 more
doaj +1 more source
Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures
Nanotechnology Reviews, 2017 The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In
John Chelliah Cyril R.A. +1 more
doaj +1 more source
, 2023 Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good as 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is due to protection structures preventing breakdown caused by high electric fields at the edge of the segmented ...
Nizam, M. +6 more
openaire +2 more sources
Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations [PDF]
, 2019 The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide ...
Antoniou, M +6 more
core +1 more source
PLoS ONE, 2012 The limited efficacy of existing antiviral therapies for influenza--coupled with widespread baseline antiviral resistance--highlights the urgent need for more effective therapy.
Jack T Nguyen +6 more
doaj +1 more source
IEEE Access, 2020 A machine learning (ML) model by combing two autoencoders and one linear regression model is proposed to avoid overfitting and to improve the accuracy of Technology Computer-Aided Design (TCAD)-augmented ML for semiconductor structural variation ...
Kashyap Mehta +5 more
doaj +1 more source