Results 31 to 40 of about 24,214 (199)

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

Micromachines
Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly varies ...
Mischa Thesberg, Franz Schanovsky, Ying Zhao, Markus Karner, Jose Maria Gonzalez-Medina, Zlatan Stanojević, Adrian Chasin, Gerhard Rzepa   +7 more
doaj   +1 more source

Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling

Micromachines, 2022
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results.
Konstantin O. Petrosyants, Denis S. Silkin, Dmitriy A. Popov   +2 more
doaj   +1 more source

Simulation of radiation-induced defects

, 2015
Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle physics ...
Peltola, Timo
core   +1 more source

Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability [PDF]

, 2014
In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-
Asenov, A., Brown, A.R., Cheng, B., Millar, C., Wang, X.   +4 more
core   +1 more source

Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations

AIP Advances, 2021
The electron trapping in AlGaN/GaN high-electron mobility transistors (HEMTs) with iron (Fe)-doped buffer is investigated through Drain Current Transient (DCT) measurements and TCAD physics-based 2D device simulations.
Mohamed Bouslama, P. Vigneshwara Raja, Florent Gaillard, Raphael Sommet, Jean-Christophe Nallatamby   +4 more
doaj   +1 more source

Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]

, 2008
Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio, Furno, M., Ghione, Giovanni   +2 more
core   +1 more source

Triple combination antiviral drug (TCAD) composed of amantadine, oseltamivir, and ribavirin impedes the selection of drug-resistant influenza A virus.

PLoS ONE, 2011
Widespread resistance among circulating influenza A strains to at least one of the anti-influenza drugs is a major public health concern. A triple combination antiviral drug (TCAD) regimen comprised of amantadine, oseltamivir, and ribavirin has been ...
Justin D Hoopes, Elizabeth M Driebe, Erin Kelley, David M Engelthaler, Paul S Keim, Alan S Perelson, Libin Rong, Gregory T Went, Jack T Nguyen   +8 more
doaj   +1 more source

Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade

, 2014
The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses.
Dinu, N., Gkougkousis, E., Lounis, A., Nellist, C.   +3 more
core   +3 more sources

Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study [PDF]

, 2017
In this work, we observed the signatures of isotropic charge distributions showing the same attributes as the golden ratio (Phi) described in art and architecture, we also present a simulation study of ultra-scaled n-type silicon nanowire transistors ...
Adamu-Lema, Fikru, Al-Ameri, Talib, Asenov, Asen, Georgiev, V.P.   +3 more
core   +1 more source

Charge transport in semiconductors assembled from nanocrystal quantum dots

Nature Communications, 2020
While efficiency of nanocrystal-based devices has improved, charge transport within semiconductors assembled from nanocrystal quantum dots has remained unclear.
Nuri Yazdani, Samuel Andermatt, Maksym Yarema, Vasco Farto, Mohammad Hossein Bani-Hashemian, Sebastian Volk, Weyde M. M. Lin, Olesya Yarema, Mathieu Luisier, Vanessa Wood   +9 more
doaj   +1 more source