Results 41 to 50 of about 24,214 (199)

Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades [PDF]

, 2012
The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature
Bagolini, A., Bomben, M., Boscardin, M., Bosisio, L., Calderini, G., Chauveau, J., Giacomini, G., La Rosa, A., Marchori, G., Zorzi, N.   +9 more
core   +2 more sources

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT

Известия высших учебных заведений России: Радиоэлектроника
Introduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov, I. S. Pushnitsa, A. L. Dudin, V. V. Perepelovskiy   +3 more
doaj   +1 more source

An Experimentally-Validated Verilog-A SPAD Model Extracted from TCAD Simulation [PDF]

, 2018
Single-photon avalanche diodes (SPAD) are photodetectors with exceptional characteristics. This paper proposes a new approach to model them in Verilog-A HDL with the help of a powerful tool: TCAD simulation. Besides, to the best of our knowledge, this is
Carmona Galán, Ricardo, López Martínez, Juan Manuel, Rodríguez Vázquez, Ángel Benito, Vornicu, Ion   +3 more
core   +1 more source

Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance

Advanced Materials Technologies, EarlyView.
This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim, Jae Won Lee, Wonbeen Jeong, Eun Kwang Lee, Jiyoul Lee   +4 more
wiley   +1 more source

Quantum transport through a constriction in nanosheet gate-all-around transistors

Communications Engineering
In nanoscale transistors, quantum mechanical effects such as tunneling and quantization significantly influence device characteristics. However, large-scale quantum transport simulation remains a challenging field, making it difficult to account for ...
Kyoung Yeon Kim, Hong-Hyun Park, Seonghoon Jin, Uihui Kwon, Woosung Choi, Dae Sin Kim   +5 more
doaj   +1 more source

Efficiency and timing performance of the MuPix7 high-voltage monolithic active pixel sensor

, 2018
The MuPix7 is a prototype high voltage monolithic active pixel sensor with 103 times 80 um2 pixels thinned to 64 um and incorporating the complete read-out circuitry including a 1.25 Gbit/s differential data link.
Aeschbacher, Frank Meier, Augustin, Heiko, Berger, Niklaus, Bruch, Dorothea vom, Dittmeier, Sebastian, González, Annie Meneses, Grzesik, Carsten, Hammerich, Jan, Hartenstein, Ulrich, Huang, Qinhua, Huth, Lennart, Immig, David Maximilian, Kiehn, Moritz, Kozlinskiy, Alexandr, Perić, Ivan, Perrevoort, Ann-Kathrin, Schöning, André, Shrestha, Shruti, Wauters, Frederik, Wiedner, Dirk   +19 more
core   +1 more source

Investigation of charge collection in a CdTe-Timepix detector [PDF]

, 2013
Energy calibration of CdTe detectors is usually done using known reference sources disregarding the exact amount of charge that is collected in the pixels. However, to compare detector and detector model the quantity of charge collected is needed.
Fröjdh, C., Fröjdh, E., Krapohl, D., Maneuski, D., Nilsson, H., Thungström, G.   +5 more
core   +1 more source

Tunable Switching Mechanisms in HfZrO2‐Based Tunnel Junctions for High‐Performance Synaptic Arrays

Advanced Science, EarlyView.
This work demonstrates hybrid switching in engineered HZO‐based FTJs, enabled by controlled interlayer design and oxygen scavenging dynamics. The combined switching mechanism produces robust multilevel conductance states in large crossbar arrays, offering a materials‐driven pathway toward scalable in‐memory computing with enhanced tunability and ...
Jiwon You, Jeong‐Han Kim, Minsuk Song, Been Kwak, Eun Chan Park, Manh‐Cuong Nguyen, Wonjun Shin, Jangsaeng Kim, Daewoong Kwon   +8 more
wiley   +1 more source

Structure and Thermal Properties of 2,2′-Azobis(1H-Imidazole-4,5-Dicarbonitrile)—A Promising Starting Material for a Novel Group of Energetic Compounds

Molecules, 2020
A high-nitrogen compound, 2,2′-azobis(1H-imidazole-4,5-dicarbonitrile) (TCAD), was synthesized from commercially available 2-amino-1H-imidazole-4,5-dicarbonitrile. It was characterized with infrared and nuclear magnetic resonance spectroscopy.
Rafał Lewczuk, Maria Książek, Katarzyna Gańczyk-Specjalska, Katarzyna Cieślak   +3 more
doaj   +1 more source